Nickel-plating stack, semiconductor device, manufacturing apparatus for nickel-plating stack, method of manufacturing nickel-plating stack, and method of manufacturing semiconductor device

Abstract

A method of manufacturing a nickel-plating stack includes: preparing a nickel plating solution including phosphorus and a sulfur additive, and a plating-target member; and forming a nickel-plating stack on the plating-target member using the nickel plating solution. The nickel-plating stack includes nickel layers having different phosphorus concentrations.

What is claimed is: 
     
         1 . A method of manufacturing a nickel-plating stack, the method comprising:
 preparing a nickel plating solution including phosphorus and a sulfur additive, and a plating-target member; and   forming a nickel-plating stack on the plating-target member using the nickel plating solution, wherein   the nickel-plating stack includes nickel layers having different phosphorus concentrations.   
     
     
         2 . The method of manufacturing a nickel-plating stack according to  claim 1 , wherein
 in the forming the nickel-plating stack,
 convection of the nickel plating solution is caused. 
   
     
     
         3 . The method of manufacturing a nickel-plating stack according to  claim 1 , wherein
 in the forming the nickel-plating stack,
 the plating-target member is shaken. 
   
     
     
         4 . The method of manufacturing a nickel-plating stack according to  claim 1 , wherein the plating-target member includes an underlying layer. 
     
     
         5 . The method of manufacturing a nickel-plating stack according to  claim 1 , the method comprising, after the forming the nickel-plating stack, forming a plurality of recesses in the nickel-plating stack using an electrolytic solution including a metal ion more noble than nickel. 
     
     
         6 . A method of manufacturing a semiconductor device using the method of manufacturing a nickel-plating stack according to  claim 1 , wherein
 the plating-target member includes a semiconductor base member.   
     
     
         7 . A manufacturing apparatus for a nickel-plating stack, the manufacturing apparatus comprising:
 a container that accommodates a nickel plating solution; and   at least one of a convection mechanism that causes convection of the nickel plating solution and a shaking mechanism that shakes a plating-target member.   
     
     
         8 . A nickel-plating stack comprising at least three or more nickel layers, wherein
 two nickel layers having different phosphorus concentrations among the nickel layers are disposed in direct contact with each other.   
     
     
         9 . A semiconductor device comprising:
 the nickel-plating stack according to claim  8 ; and   a connection member, wherein   a recess is provided in the nickel-plating stack, and   the nickel-plating stack and the connection member are connected by the recess.