Radio frequency amplifier
Abstract
A radio frequency amplifier includes: a transistor; an input line; an output line; and a shunt circuit that is connected between ground and the input line or the output line, wherein the shunt circuit includes: a first series resonant circuit that includes an inductor and a capacitor that are connected in series and has first resonant frequency f1; a second series resonant circuit that includes an inductor and a capacitor that are connected in series and has second resonant frequency f2 that is different from the first resonant frequency; and a resistor that is connected between a first connection point and a second connection point, the first connection point being a connection location between the inductor and the capacitor in the first series resonant circuit, the second connection point being a connection location between the inductor and the capacitor in the second series resonant circuit.
Claims
exact text as granted — not AI-modified1 . A radio frequency amplifier comprising:
a transistor; an input line that transmits a radio frequency (RF) signal to be inputted into the transistor; an output line that transmits an RF signal that is outputted from the transistor; and a shunt circuit that is connected between ground and the input line or the output line, wherein the shunt circuit includes:
a first series resonant circuit that is connected between a node and the ground, includes a first inductor element and a first capacitor element that are connected in series, and has a first resonant frequency, the node being on the input line or the output line;
a second series resonant circuit that is connected between the node and the ground, includes a second inductor element and a second capacitor element that are connected in series, and has a second resonant frequency that is different from the first resonant frequency; and
a first impedance element that is connected between a first connection point and a second connection point and includes a resistance component, the first connection point being a connection location between the first inductor element and the first capacitor element, the second connection point being a connection location between the second inductor element and the second capacitor element.
2 . The radio frequency amplifier according to claim 1 , wherein
the transistor includes:
a gate;
a drain; and
a source, and
the first inductor element and the first capacitor element are a transmission line and a bypass capacitor, respectively, that are included in a drain bias circuit that supplies a bias voltage to the drain, or are included in a gate bias circuit that supplies a bias voltage to the gate.
3 . The radio frequency amplifier according to claim 2 , wherein
the first connection point and the second connection point are connected by a series circuit, the series circuit including the first impedance element and a direct current (DC)-blocking element.
4 . The radio frequency amplifier according to claim 1 , wherein
the first impedance element is a resistor element.
5 . The radio frequency amplifier according to claim 1 , wherein
the shunt circuit further includes a third series resonant circuit that is connected between the node and the ground, includes a third inductor element and a third capacitor element that are connected in series, and has a third resonant frequency that is different from the first resonant frequency and the second resonant frequency.
6 . The radio frequency amplifier according to claim 1 , wherein
in the first series resonant circuit, the first inductor element is connected closer to the node than the first capacitor element is.
7 . The radio frequency amplifier according to claim 1 , wherein
the first impedance element is connected between a node and the ground and includes a direct current (DC)-blocking element, the node being a node at which the first connection point and the second connection point are shorted.
8 . The radio frequency amplifier according to claim 1 , wherein
an impedance element that blocks signals of the first resonant frequency and the second resonant frequency is absent between the shunt circuit and a gate or a drain of the transistor.
9 . The radio frequency amplifier according to claim 8 , wherein
an impedance of the impedance element is 20Ω or greater.
10 . The radio frequency amplifier according to claim 1 , wherein
the resistance component is 60Ω or less.
11 . The radio frequency amplifier according to claim 1 , wherein
the resistance component is 30Ω or greater.
12 . The radio frequency amplifier according to claim 5 , wherein
the first resonant frequency, the second resonant frequency, and the third resonant frequency are arranged at equal intervals on a logarithmic scale.Join the waitlist — get patent alerts
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