US2026035828A1PendingUtilityA1
Systems and methods for removing contaminants in electroplating systems
Est. expiryMay 9, 2038(~11.8 yrs left)· nominal 20-yr term from priority
C25D 7/12C25D 5/08C25D 3/38C25D 3/30C25D 21/18C25D 17/02C25D 17/002C25D 5/18C25D 21/06
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Claims
Abstract
Electroplating systems according to the present technology may include a two-bath electroplating chamber including a separator configured to provide fluid separation between a first bath configured to maintain a catholyte during operation and a second bath configured to maintain an anolyte during operation. The system may include a catholyte tank fluidly coupled with the first bath of the two-bath electroplating chamber. The system may also include a contaminant retrieval system configured to remove contaminant ions from the catholyte.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1 . A method of removing copper contaminants from a tin-containing catholyte within an electroplating system, the method comprising:
flowing the tin-containing catholyte from an electroplating chamber to a catholyte tank; passing the tin-containing catholyte across a tin-containing material; and reducing a copper contaminant concentration in the tin-containing catholyte.
2 . The method of removing copper contaminants from a tin-containing catholyte within an electroplating system of claim 1 , wherein the tin-containing material comprises an anode of an anode-cathode pair of electrically coupled electrodes.
3 . The method of removing copper contaminants from a tin-containing catholyte within an electroplating system of claim 2 , wherein the anode-cathode pair are driven at a voltage below a tin plating potential and above a copper plating potential.
4 . The method of removing copper contaminants from a tin-containing catholyte within an electroplating system of claim 2 , wherein a cathode of the anode-cathode pair comprises tin or a material more noble than copper.
5 . The method of removing copper contaminants from a tin-containing catholyte within an electroplating system of claim 2 , wherein the tin-containing material is maintained in a vessel positioned between and fluidly coupled with the electroplating chamber and the catholyte tank.
6 . The method of removing copper contaminants from a tin-containing catholyte within an electroplating system of claim 1 , wherein the tin-containing material comprises a packed column of the tin-containing material.
7 . The method of removing copper contaminants from a tin-containing catholyte within an electroplating system of claim 1 , wherein the tin-containing material is disposed within the catholyte tank.
8 . A method of removing copper contaminants from a tin-containing catholyte within an electroplating system, the method comprising:
flowing the tin-containing catholyte from an electroplating chamber to a catholyte tank, wherein the catholyte tank comprises an anode-cathode pair of electrically coupled electrodes; applying a voltage to the anode-cathode pair of electrically coupled electrodes; and reducing a copper contaminant concentration from the tin-containing catholyte.
9 . The method of removing copper contaminants from a tin-containing catholyte within an electroplating system of claim 8 , wherein the voltage is below a plating potential for tin.
10 . The method of removing copper contaminants from a tin-containing catholyte within an electroplating system of claim 8 , wherein the voltage is less than 2.3 V.
11 . The method of removing copper contaminants from a tin-containing catholyte within an electroplating system of claim 8 , wherein the voltage is greater than 1.5 V.
12 . The method of removing copper contaminants from a tin-containing catholyte within an electroplating system of claim 8 , further comprising:
subsequent to a first period of time, increasing the voltage.
13 . The method of removing copper contaminants from a tin-containing catholyte within an electroplating system of claim 8 , wherein a cathode of the anode-cathode pair comprises tin or a material more noble than copper.
14 . The method of removing copper contaminants from a tin-containing catholyte within an electroplating system of claim 8 , wherein the copper contaminant concentration is maintained at less than or about 10 ppm.
15 . The method of removing copper contaminants from a tin-containing catholyte within an electroplating system of claim 14 , wherein the copper contaminant concentration is maintained at less than or about 10 ppm after processing more than or about 1,000 substrates.
16 . A method of removing copper contaminants from a tin-containing catholyte within an electroplating system, the method comprising:
flowing the tin-containing catholyte from an electroplating chamber to a catholyte tank, wherein the catholyte tank comprises an anode-cathode pair of electrically coupled electrodes; applying a first voltage to the anode-cathode pair of electrically coupled electrodes for a first period of time; subsequent to the first period of time, increasing the first voltage to a second voltage; applying the second voltage to the anode-cathode pair of electrically coupled electrodes for a second period of time; and reducing a copper contaminant concentration from the tin-containing catholyte.
17 . The method of removing copper contaminants from a tin-containing catholyte within an electroplating system of claim 16 , wherein the first voltage and the second voltage are greater than or about 1.5 V.
18 . The method of removing copper contaminants from a tin-containing catholyte within an electroplating system of claim 16 , wherein the first voltage and the second voltage are less than or about 2.3 V.
19 . The method of removing copper contaminants from a tin-containing catholyte within an electroplating system of claim 16 , wherein the copper contaminant concentration is maintained at less than or about 10 ppm.
20 . The method of removing copper contaminants from a tin-containing catholyte within an electroplating system of claim 19 , wherein the copper contaminant concentration is maintained at less than or about 10 ppm after processing more than or about 1,000 substrates.Join the waitlist — get patent alerts
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