System to retrofit end-of-life and near end-of-life silicon solar panels

Abstract

A photovoltaic film system for use with a near end-of-life or end-of-life silicon solar panel, the photovoltaic film system comprising a translucent photovoltaic film stack which includes, in order, an outer protective layer, an outer translucent electrode layer, one of an electron transport layer or a hole transport layer, a semi-conductor perovskite layer, the other of the hole transport layer or the electron transport layer and an inner translucent electrode layer; an inverter; and electrical connectors connecting the inverter to each of the outer translucent electrode layer and the inner translucent electrode layer. The photovoltaic film system can be used to restore near end-of-life or end-of-life silicon solar panels in situ.

1 . A solar collector, the solar collector comprising:
 a near end-of-life or end-of-life silicon solar panel, which includes an upper surface;
 a photovoltaic film system, the photovoltaic film system comprising a translucent photovoltaic film stack which includes, in order, 
 an outer protective layer, 
 an outer translucent electrode layer, 
 one of an electron transport layer or a hole transport layer, 
 a semi-conductor perovskite layer, 
 the other of the hole transport layer or the electron transport layer, 
 an inner translucent electrode layer; 
 an inverter; 
 and electrical connectors connecting the inverter to each of the outer translucent electrode layer and the inner translucent electrode layer, wherein the near end-of-life or end-of-life silicon solar panel is in electrical communication with the inverter and the translucent photovoltaic film stack defines a protective convex cover that is spaced apart from the near end-of-life or end-of-life silicon solar panel. 
   
     
     
         2 . The solar collector of  claim 1 , wherein the semiconductor perovskite layer is tuned to convert energy in a band gap of 1.2 eV to 2.3 eV. 
     
     
         3 . The solar collector of  claim 2 , further comprising a frame which retains the near end-of-life or end-of-life silicon solar panel and the photovoltaic film system. 
     
     
         4 . The solar collector of  claim 3 , wherein the solar collector is configured for concomitant light conversion in the translucent photovoltaic film stack and the near end-of-life or end-of-life silicon solar panel. 
     
     
         5 . A method of restoring a near end-of-life or end-of-life silicon solar panel in situ, the method comprising:
 manufacturing a photovoltaic film system, the photovoltaic film system comprising a translucent photovoltaic film stack which includes, in order,   an outer protective layer,   an outer translucent electrode layer,   one of an electron transport layer or a hole transport layer,   a semi-conductor perovskite layer,   the other of the hole transport layer or the electron transport layer,   an inner translucent electrode layer;   an inverter; and electrical connectors connecting the inverter to each of the outer translucent electrode layer and the inner translucent electrode layer;   framing the photovoltaic film system and the near end-of-life or end-of-life silicon solar panel with a frame such that the photovoltaic film stack defines a protective convex cover that is spaced apart from the near end-of-life or end-of-life silicon solar panel; and   electrically connecting the inverter to the near end-of-life or end-of-life silicon solar panel, thereby restoring the near end-of-life or end-of-life silicon solar panel in situ.   
     
     
         6 . The method of  claim 5 , further comprising tuning the semiconductor perovskite layer convert energy in a band gap of 1.2 eV to 2.3 eV prior to manufacturing the photovoltaic film system. 
     
     
         7 . An enhanced silicon solar collector, the enhanced silicon solar collector comprising:
 a near end-of-life or end-of-life silicon solar module, which includes an upper surface;
 a glass perovskite photovoltaic system, the glass perovskite photovoltaic system comprising a translucent photovoltaic stack which includes, in order, 
 a glass junction box layer which includes a junction box, 
 an outer translucent electrode layer, 
 one of an electron transport layer or a hole transport layer, 
 a semi-conductor perovskite layer, 
 the other of the hole transport layer or the electron transport layer and an inner translucent electrode layer; 
   and electrical connectors connecting the junction box and each of the outer electrode and the inner electrode;
 a frame which retains the near end-of-life or end-of-life silicon solar module and the glass perovskite photovoltaic system, wherein the near end-of-life or end-of-life silicon solar module is in electrical communication with the junction box and the translucent photovoltaic film stack defines a protective convex cover that is spaced apart from the near end-of-life or end-of-life silicon solar panel. 
   
     
     
         8 . The enhanced solar collector of  claim 7 , wherein the semiconductor perovskite layer is tuned to convert energy in a band gap of 1.2 eV to 2.3 eV. 
     
     
         9 . The enhanced solar collector of  claim 8 , wherein the enhanced solar collector is configured for concomitant light conversion in the translucent photovoltaic stack and the near end-of-life or end-of-life silicon solar module. 
     
     
         10 . A method of enhancing a near end-of-life or end-of-life silicon solar module in situ, the method comprising:
 manufacturing a glass perovskite photovoltaic system, the glass perovskite photovoltaic system comprising a translucent photovoltaic stack which includes, in order,   an outer translucent electrode layer which includes an upper surface,   one of an electron transport layer or a hole transport layer,   a semi-conductor perovskite layer,   the other of the hole transport layer or the electron transport layer,   an inner translucent electrode layer;   a glass junction box layer which is located on the upper surface and includes a junction box;   and electrical connectors connecting the junction box to each of the outer translucent electrode layer and the inner translucent electrode layer;   framing the photovoltaic film system and the near end-of-life or end-of-life silicon solar panel with a frame such that the photovoltaic film stack defines a protective convex cover that is spaced apart from the near end-of-life or end-of-life silicon solar panel; and   electrically connecting the junction box to the near end-of-life or end-of-life silicon solar module, thereby enhancing the near end-of-life or end-of-life silicon solar module in situ.   
     
     
         11 . The method of  claim 10 , further comprising tuning the semiconductor perovskite layer convert energy in a band gap of 1.2 eV to 2.3 eV prior to manufacturing the glass perovskite photovoltaic system.