Substrate polishing apparatus, method for manufacturing semiconductor device including the same, and method for conditioning the substrate polishing apparatus

Abstract

Provided is a substrate polishing apparatus including a polishing pad, a head portion configured to move a substrate to contact the polishing pad, and a conditioning device on the polishing pad in a vertical direction and spaced apart from the polishing pad, wherein the conditioning device includes a supplier configured to produce a source material, and a sprayer connected to the supplier and configured to generate aerosol from the source material, and wherein the sprayer includes a low pressure chamber, and a spray nozzle configured to spray the aerosol to the polishing pad.

What is claimed is: 
     
         1 . A substrate polishing apparatus comprising:
 a polishing pad;   a head portion configured to move a substrate to contact the polishing pad; and   a conditioning device on the polishing pad in a vertical direction and spaced apart from the polishing pad,   wherein the conditioning device comprises:
 a supplier configured to produce a source material; and 
 a sprayer connected to the supplier and configured to generate aerosol from the source material, and 
   wherein the sprayer comprises:
 a low pressure chamber; and 
 a spray nozzle configured to spray the aerosol to the polishing pad. 
   
     
     
         2 . The substrate polishing apparatus of  claim 1 , wherein the aerosol comprises a solid material. 
     
     
         3 . The substrate polishing apparatus of  claim 1 , wherein the source material comprises a cryogenic fluid. 
     
     
         4 . The substrate polishing apparatus of  claim 1 , further comprising a laser adjacent to the sprayer,
 wherein the laser is configured emit a beam to vaporize or sublimate the aerosol.   
     
     
         5 . The substrate polishing apparatus of  claim 1 , wherein the supplier comprises:
 a first source supply gadget;   a second source supply gadget;   a cooling tank connected to the second source supply gadget; and   a first connection pipe connected to the first source supply gadget, the first connection pipe being included in the cooling tank.   
     
     
         6 . The substrate polishing apparatus of  claim 5 , wherein the first source supply gadget is configured to supply a gas source to the first connection pipe. 
     
     
         7 . The substrate polishing apparatus of  claim 6 , wherein the gas source comprises at least one of argon (Ar) or nitrogen (N 2 ). 
     
     
         8 . The substrate polishing apparatus of  claim 6 , wherein the cooling tank is configured to change the gas source supplied to the first connection pipe to the source material, and
 wherein the source material is liquefied.   
     
     
         9 . The substrate polishing apparatus of  claim 5 , wherein the second source supply gadget is configured to supply liquid nitrogen to the cooling tank. 
     
     
         10 . The substrate polishing apparatus of  claim 5 , wherein a pressure of an inside of the first connection pipe is greater than a pressure of the low pressure chamber. 
     
     
         11 . The substrate polishing apparatus of  claim 1 , wherein the sprayer further comprises a sliding shutter configured to move left and right in the low pressure chamber, and
 wherein the sliding shutter is configured to block an input end of the spray nozzle.   
     
     
         12 . A substrate polishing apparatus comprising:
 a polishing pad;   a head configured to move a substrate to contact the polishing pad; and   a conditioning device on the polishing pad in a vertical direction and spaced apart from the polishing pad,   wherein the conditioning device comprises:
 a supplier configured to produce a source material; and 
 a sprayer connected to the supplier and configured to generate aerosol from the source material, 
   wherein the supplier comprises:
 a first source supply gadget; 
 a cooling tank; and 
 a first connection pipe connected to the first source supply gadget and included in the cooling tank, 
   wherein the sprayer comprises:
 a low pressure chamber; and 
 a spray nozzle configured to spray the aerosol to the polishing pad, and 
   wherein a pressure of an inside of the low pressure chamber is less than a pressure of an inside of the first connection pipe.   
     
     
         13 . The substrate polishing apparatus of  claim 12 , wherein the aerosol comprises a solid material. 
     
     
         14 . The substrate polishing apparatus of  claim 12 , wherein the supplier further comprises a second source supply gadget connected to the cooling tank, and
 wherein the second source supply gadget is configured to supply liquid nitrogen to the cooling tank.   
     
     
         15 . The substrate polishing apparatus of  claim 12 , wherein the first source supply gadget is configured to supply a gas source to the first connection pipe,
 wherein the cooling tank is configured to change the gas source supplied to the first connection pipe to the source material, and   wherein the source material comprises a cryogenic fluid.   
     
     
         16 . The substrate polishing apparatus of  claim 15 , wherein the gas source comprises at least one of argon (Ar) or nitrogen (N 2 ). 
     
     
         17 . The substrate polishing apparatus of  claim 12 , wherein the sprayer further comprises a sliding shutter configured to move left and right in the low pressure chamber, and
 wherein the sliding shutter is configured to block an input end of the spray nozzle.   
     
     
         18 . A method for manufacturing a semiconductor device, the method comprising:
 preparing a substrate;   disposing the substrate in a substrate polishing apparatus;   rotating each of the substrate and a polishing pad of the substrate polishing apparatus;   moving a lower surface of the substrate to contact an upper surface of the polishing pad; and   spraying aerosol toward the upper surface of the polishing pad through a spray nozzle of a conditioning device,   wherein the moving of the lower surface of the substrate to contact the upper surface of the polishing pad comprises polishing the lower surface of the substrate by being in contact with the upper surface of the polishing pad, and   wherein the conditioning device comprises:
 a cooling tank; 
 a first connection pipe provided in the cooling tank; and 
 a low pressure chamber connected to the first connection pipe. 
   
     
     
         19 . The method of  claim 18 , further comprising:
 supplying gas to the first connection pipe; and   supplying liquid nitrogen to the cooling tank.   
     
     
         20 . The method of  claim 18 , further comprising controlling a pressure of an inside of the low pressure chamber to be less than a pressure of an inside of the first connection pipe.