Chip resistor with temperature sensing function and manufacturing method thereof

Abstract

A chip resistor with a temperature sensing function is provided. The chip resistor includes a substrate, a resistive layer, a thermosensitive layer, a pair of first electrodes, and a pair of second electrodes. The resistive layer is disposed on a first portion of the substrate. The thermosensitive layer is disposed on a second portion of the substrate, in which a gap is between the resistive layer and the thermosensitive layer. The pair of first electrodes respectively cover two sides of the resistive layer. The pair of second electrodes respectively cover two sides of the thermosensitive layer.

What is claimed is: 
     
         1 . A chip resistor with a temperature sensing function, comprising: 
 a substrate;   a resistive layer disposed on a first portion of the substrate;   a thermosensitive layer disposed on a second portion of the substrate, wherein a gap is between the resistive layer and the thermosensitive layer;   a pair of first electrodes respectively covering two sides of the resistive layer; and   a pair of second electrodes respectively covering two sides of the thermosensitive layer.   
     
     
         2 . The chip resistor according to  claim 1 , wherein a material of the thermosensitive layer is a positive temperature coefficient material. 
     
     
         3 . The chip resistor according to  claim 1 , wherein a material of the thermosensitive layer is a negative temperature coefficient material. 
     
     
         4 . The chip resistor according to  claim 1 , wherein a distance of the gap is from 50 microns to 200 microns. 
     
     
         5 . The chip resistor according to  claim 4 , wherein the gap is uniform. 
     
     
         6 . The chip resistor according to  claim 1 , further comprising: 
 a protective layer covering a portion surface of the resistive layer, a portion surface of the thermosensitive layer, and the gap.   
     
     
         7 . The chip resistor according to  claim 6 , wherein each of the pair of first electrodes comprises: 
 a copper layer, wherein the copper layer is at least 5 microns thicker than the protective layer.   
     
     
         8 . The chip resistor according to  claim 1 , wherein an area of the resistive layer is larger than an area of the thermosensitive layer in a frontal view. 
     
     
         9 . The chip resistor according to  claim 1 , wherein a volume of each of the pair of first electrodes is greater than a volume of each of the pair of second electrodes. 
     
     
         10 . The chip resistor according to  claim 1 , wherein the resistive layer has a first resistive trimming area. 
     
     
         11 . The chip resistor according to  claim 10 , wherein the thermosensitive layer has a second resistive trimming area. 
     
     
         12 . The chip resistor according to  claim 1 , further comprising: 
 a pair of first internal electrodes contacting the resistive layer and respectively covered by the pair of first electrodes; and   a pair of second internal electrodes contacting the thermosensitive layer and respectively covered by the pair of second electrodes.   
     
     
         13 . The chip resistor according to  claim 12 , wherein a material of the thermosensitive layer is a negative temperature coefficient material, one of the pair of second internal electrodes comprises a first extension, the other one of the pair of second internal electrodes comprises a second extension, and wherein the first extension is disposed between the substrate and the thermosensitive layer, and the second extension is disposed on the thermosensitive layer. 
     
     
         14 . The chip resistor according to  claim 13 , wherein the second extension is a bent structure to extend from a surface of the substrate onto the thermosensitive layer. 
     
     
         15 . A manufacturing method of a chip resistor with a temperature sensing function, comprising: 
 providing a substrate;   disposing a resistive layer on a first portion of the substrate;   disposing a thermosensitive layer on a second portion of the substrate;   forming a pair of first electrodes on two sides of the resistive layer respectively; and   forming a pair of second electrodes on two sides of the thermosensitive layer respectively.   
     
     
         16 . The manufacturing method according to  claim 15 , wherein a material of the thermosensitive layer is a negative temperature coefficient material, and manufacturing method further comprising: 
 disposing a first internal electrode on the second portion of the substrate before disposing the thermosensitive layer on the second portion of the substrate, wherein the first internal electrode has a first extension;   disposing the thermosensitive layer on the first internal electrode, wherein the thermosensitive layer covers the first extension of the first internal electrode; and   disposing a second internal electrode on the thermosensitive layer.   
     
     
         17 . The manufacturing method according to  claim 16 , wherein the second internal electrode has a second extension, the second extension is a bent structure to extend from a surface of the substrate onto the thermosensitive layer. 
     
     
         18 . The manufacturing method according to  claim 17 , further comprising: 
 disposing a first protective layer on the second internal electrode; and   disposing a second protective layer on the first protective layer.   
     
     
         19 . The manufacturing method according to  claim 18 , wherein a material of the first protective layer is an insulating glass. 
     
     
         20 . The manufacturing method according to  claim 19 , wherein a sintering temperature of the first protective layer is lower than a sintering temperature of the second internal electrode.