Grinding head

Abstract

According to some embodiments, a grinding head configured to grind a grinding target, the head includes a wheel including a rotating front surface and a plurality of grindstones arranged in an annular shape on the rotating front surface with a rotation axis of the rotating front surface as a center. Each of the plurality of grindstones includes a first surface configured to be in contact with the grinding target and a second surface inclined at an acute angle with respect to a traveling direction of the grindstone from the rotating front surface to the first surface.

What is claimed is: 
     
         1 . A grinding head configured to grind a grinding target, the grinding head comprising:
 a wheel comprising a rotating front surface; and   a plurality of grindstones arranged in an annular shape on the rotating front surface with a rotation axis of the rotating front surface as a center, wherein each of the plurality of grindstones comprise:
 a first surface configured to be in contact with the grinding target; and 
 a second surface inclined at an acute angle with respect to a traveling direction of the grindstone from the rotating front surface to the first surface. 
   
     
     
         2 . The grinding head of  claim 1 , wherein the grinding target comprises:
 a first semiconductor substrate;   a second semiconductor substrate;   a first layer between the first semiconductor substrate and the second semiconductor substrate; and   a second layer provided between the first layer and the second semiconductor substrate and bonded to the first layer.   
     
     
         3 . The grinding head of  claim 2 , the first surface is configured to be in contact with a front surface of the second semiconductor substrate. 
     
     
         4 . The grinding head of  claim 1 , wherein the grinding target is supported by a stage and positioning of the grinding target is controlled during grinding. 
     
     
         5 . The grinding head of  claim 1 , wherein grinding the grinding target comprises moving the grinding head to position the first surface of the grindstone in contact with the grinding target and rotating the rotating front surface. 
     
     
         6 . A grinding head configured to grind a grinding target, the grinding head comprising:
 a wheel comprising a rotating front surface; and   a plurality of grindstones arranged in an annular shape on the rotating front surface with a rotation axis of the rotating front surface as a center, wherein each of the plurality of grindstones comprise:
 a first surface configured to be in contact with the grinding target; and 
 a second surface inclined at an inclination angle of 60° or more and 75° or less with respect to a traveling direction of the grindstone from the rotating front surface to the first surface; 
   wherein a width d of the grindstone, an inclination width s of the second surface, an inclination angle θ of a slit between adjacent grindstones with respect to a first straight line along a radial direction of the rotating front surface, an angle x formed by a first tangent to a trajectory, drawn by an outer side surface of the grindstone when the rotating front surface rotates, passing through an intersection point between the trajectory and a peripheral edge of the grinding target, and a second tangent to the peripheral edge of the grinding target passing through the intersection point, and a width p of the slit satisfy:   
       
         
           
             
               
                 
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                       θ 
                     
                   
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                   x 
                 
               
               > 
               
                 p 
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                   s 
                   . 
                 
               
             
           
         
       
     
     
         7 . The grinding head of  claim 6 , wherein the grinding target comprises:
 a first semiconductor substrate;   a second semiconductor substrate;   a first layer between the first semiconductor substrate and the second semiconductor substrate; and   a second layer provided between the first layer and the second semiconductor substrate and bonded to the first layer.   
     
     
         8 . The grinding head of  claim 7 , the first surface is configured to be in contact with a front surface of the second semiconductor substrate. 
     
     
         9 . The grinding head of  claim 6  wherein the grinding target is supported by a stage and positioning of the grinding target is controlled during grinding. 
     
     
         10 . The grinding head of  claim 6 , wherein grinding the grinding target comprises moving the grinding head to position the first surface of the grindstone in contact with the grinding target and rotating the rotating front surface. 
     
     
         11 . A grinding head configured to grind a grinding target, the grinding head comprising:
 a wheel comprising a rotating front surface;   a plurality of grindstones arranged in an annular shape on the rotating front surface with a rotation axis of the rotating front surface as a center, wherein each of the plurality of grindstones comprise:
 a first surface configured to be contact with the grinding target, and 
 a second surface that extends from the rotating front surface to the first surface, 
   a planar shape on the first surface is a pentagon, and   a slit between adjacent grindstones extends in a direction intersecting a radial direction of the rotating front surface.   
     
     
         12 . The grinding head of  claim 11 , wherein the grinding target comprises:
 a first semiconductor substrate;   a second semiconductor substrate;   a first layer between the first semiconductor substrate and the second semiconductor substrate; and   a second layer provided between the first layer and the second semiconductor substrate and bonded to the first layer.   
     
     
         13 . The grinding head of  claim 12 , the first surface is configured to be in contact with a front surface of the second semiconductor substrate. 
     
     
         14 . The grinding head of  claim 11 , wherein the grinding target is supported by a stage and positioning of the grinding target is controlled during grinding. 
     
     
         15 . The grinding head of  claim 11 , wherein grinding the grinding target comprises moving the grinding head to position the first surface of the grindstone in contact with the grinding target and rotating the rotating front surface.