Low beam velocity retina for Schottky infrared vidicons

Abstract

A solid state sensing retina for infrared vidicon television camera tubes using a low voltage electron beam, consisting of a monolithic silicon wafer having an n-type substrate and two dimensional array of p-type islands, each island has a Schottky electrode photoemitter and substrate contact buss, an ohmic contact pad allows charging of the p-type region beneath the Schottky electrode.

What is claimed is: 
     
       1. A solid state retina sensing layer for infrared vidicon tubes comprising a base having one conductivity type; a plurality of cells of a second conductivity type, arranged in a two dimensional array and forming junctions with said base, a contact formed near the surface of said cell; infrared photo-emitter means affixed to at least one surface of each cell; a plurality of contact means in said base located between said cells; buss means for connecting the photoemitter means with the base contact means; a dielectric coating covering the surface of the base receiving the electron beam, a metal electrode for each cell positioned on the surface of said dielectric coating and extending through the coating to the contact of said cell whereby electrons reaching the electrode will place a charge on the cell, and a resistance means connecting the base to ground potential where the amount of charge lost by the cell due to infrared radiation may be measured. 
     
     
       2. A solid state retina sensing layer for infrared vidicon tubes according to claim 1 wherein said base comprises a monolithic silicon wafer. 
     
     
       3. A solid state retina sensing layer for infrared vidicon tubes according to claim 2 wherein said monolithic silicon wafer base includes an n-type substrate. 
     
     
       4. A solid state retina sensing layer for infrared vidicon tubes according to claim 1 wherein each of said cells comprising a p-type silicon island formed in the base. 
     
     
       5. A solid state retina sensing layer for infrared vidicon tubes according to claim 1 wherein said infrared photoemitter is a Schottky electrode. 
     
     
       6. A solid state retina sensing layer for infrared vidicon tubes according to claim 1 wherein said dielectric coating is silicon dioxide.