Method of epitaxially growing a laminate semiconductor layer in liquid phase

Abstract

A method of epitaxially growing a laminate semiconductor layer in liquid phase on the crystalline surface of a substrate by successively bringing different kinds of liquid phase epitaxial growth solution into contact with the surface of a substrate, which is characterized in that different kinds of liquid phase epitaxial growth solutions are injected one after another into solution receptacle, the bottom of which is open to the substrate surface, and each of the preceding one of the epitaxial growth solutions is expelled from the solution receptacle by each succeeding one of the epitaxial growth solutions for interchange between both solutions and thereafter each succeeding solution is epitaxially grown on the preceding one.

What is claimed is: 
     
       1. A method of epitaxially growing a laminate semiconductor layer in liquid phase on the surface of a crystalline substrate by bringing different kinds of liquid phase epitaxial growth solutions into contact with said surface, which characteristically comprises the steps of expelling the unnecessary portion of each preceding one of the respective epitaxial growth solutions deposited on the surface of the crystalline substrate by each succeeding one from said surface for interchange between the adjacent epitaxial growth solutions, and repeating said operation for the epitaxial growth of a laminate semiconductor layer. 
     
     
       2. A method according to claim 1, wherein interchange between the preceding and succeeding epitaxial growth solutions is carried out by forcing the succeeding epitaxial growth solution under pressure into one end portion of a solution receptacle filled with the preceding epitaxial growth solution through a plurality of small apertures and expelling the unnecessary portion of the preceding epitaxial growth solution through the other end portion of said solution receptacle after the preceding epitaxial growth solution is deposited on the surface of the crystalline substrate. 
     
     
       3. A method according to claim 1, wherein interchange between the preceding and succeeding epitaxial growth solutions is effected by applying the succeeding epitaxial growth solution twice or more frequently in succession so as to effectively expel the unnecessary portion of the preceding epitaxial growth solution deposited on the surface of the crystalline substrate. 
     
     
       4. A method according to claim 1, wherein, upon completion of the deposition of all constituents of an epitaxially grown laminate semiconductor layer, the unnecessary portion of the last deposited component is wiped off for producing a mirror finish by causing the bottom plate of the substrate holder to slide in close contact with the surface of said last deposited component.