Process for production of a resistance element for resistance thermometers

Abstract

There is provided a process of producing a resistance element for a resistance thermometer consisting of a thin platinum layer on an insulating solid as a carrier, by sputtering the platinum layer on the solid in a krypton-oxygen or xenon-oxygen mixture.

What is claimed is: 
     
       1. A process of producing a resistance element for a resistance thermometer by sputtering, said resistance element consisting essentially of a thin platinum layer as the resistance material on an insulating material as a substrate, the improvement comprising applying the platinum to the substrate by sputtering in a gaseous oxidizing atmosphere consisting essentially of krypton-oxygen or xenon-oxygen. 
     
     
       2. A process according to claim 1 comprising the additional step of tempering the thin platinum layer at a temperature between 700° and 1200° C. after the sputtering. 
     
     
       3. The process according to claim 2 wherein a bias voltage less than the sputtering voltage is applied to the substrate during the sputtering. 
     
     
       4. The process according to claim 1, wherein a bias voltage less than the sputtering voltage is applied to the substrate during the sputtering. 
     
     
       5. The process of claim 1 wherein the gaseous atmosphere contains 20% oxygen and the balance xenon. 
     
     
       6. The process of claim 1 wherein the gaseous atmosphere is 10 to 50% oxygen by volume and the balance is krypton or xenon. 
     
     
       7. The process of claim 6 wherein the gaseous atmosphere is 10 to 50% oxygen by volume and the balance is xenon. 
     
     
       8. The process of claim 7 wherein the sputtering is RF sputtering. 
     
     
       9. The process of claim 6 wherein the sputtering is RF sputtering. 
     
     
       10. The process of claim 1 wherein the sputtering is RF sputtering.