Fabrication of anodes by plasma spray deposition

Abstract

A method of forming capacitor anodes is described wherein leads of film forming metal, preferably headed are subjected to plasma spray deposition of film forming metal, preferably at a flame temperature of about 10,000° to 20,000° C. to form capacitor anodes.

What is claimed is: 
     
       1. A method of making an anode means capable of performing an electrical function including the steps of forming a plasma spray of film-forming metal particles, passing a headed portion of a dielectric film-forming metal means including the headed portion and an elongated portion thru the spray of dielectric film-forming metal particles, the headed portion including a section facing away from the elongated portion in a direction substantially parallel to the central longitudinal axis of the elongated portion, depositing sprayed film-forming metal particles over the section of the headed portion of the film-forming metal means, and sintering the film-forming metal means and the deposit to help bond the film-forming metal means and the deposit, the sintered deposit being porous and capable of acting as an anode means. 
     
     
       2. The method of claim 1, wherein the porous deposit of film-forming metal over the section of the headed portion includes interconnecting voids occupying up to about 50% of the total volume of the deposit. 
     
     
       3. The method of claim 2, wherein the deposit has an interlocking, leaf-like microstructure. 
     
     
       4. The method of claim 3, wherein the spray of film-forming metal particles is composed of particles having a particle size of about 1 to about 100 microns, and wherein the deposit weighs about 0.05 grams to about 30 grams. 
     
     
       5. The method of claim 1, wherein the headed portion is either a conehead configuration, or a buttonhead configuration, or a flathead configuration. 
     
     
       6. The method of claim 1, including the further steps of forming a dielectric means contacting the porous deposit of film-forming metal, contacting the dielectric means with electrolyte means, and contacting the electrolyte means with cathode means to form a capacitor. 
     
     
       7. The method of claim 6, including the further step of, prior to contacting the dielectric means with electrolyte means, providing the anode means except for the deposit with a polymeric jacket to help prevent the electrolyte means from contacting other portions of the anode means.