US4202930AExpiredUtility

Lanthanum indium gallium garnets

67
Assignee: ALLIED CHEMPriority: Feb 10, 1978Filed: Sep 13, 1978Granted: May 13, 1980
Est. expiryFeb 10, 1998(expired)· nominal 20-yr term from priority
Inventors:Milan KoktaRobert C. LinaresMichael A. Di Giuseppe
C30B 11/00C04B 35/01C30B 15/00C30B 29/28Y10S428/90
67
PatentIndex Score
14
Cited by
15
References
7
Claims

Abstract

Congruently melting compositions of gallium garnets containing lanthanum are provided in which trivalent indium is partially substituted for gallium. The lanthanum indium gallium garnets have larger lattice parameters than other rare earth gallium garnets. The lanthanum indium gallium garnets of the invention are represented by the formula LaaInbGacO12 where "a" ranges from greater than about 3.24 to less than 3.32, "b" ranges from greater than about 1.84 to less than about 2.24 and "c" ranges from greater than about 2.48 to less than about 2.88, the total of "a" plus "b" plus "c" being 8. The garnets of the invention are useful as single crystal substrates for supporting magneto-optic and magnetic garnet thin films having large lattice parameters approaching 13 A.

Claims

exact text as granted — not AI-modified
We claim: 
     
       1. A congruently melting composition of a lanthanum indium gallium garnet having the formula   La.sub.a In.sub.b Ga.sub.c O.sub.12     where "a" ranges from greater than about 3.24 to less than 3.32, "b" ranges from greater than about 1.84 to less than about 2.24 and "c" ranges from greater than about 2.48 to less than about 2.88, the total "a" plus "b" plus "c" being 8.   
     
     
       2. The composition of claim 1 in which "a" is about 3.28, "b" ranges from about 1.92 to 2.16 and "c" ranges from about 2.56 to 2.80, the total of "a", "b" and "c" being 8. 
     
     
       3. The compositions of claim 2 selected from the group consisting of La 3 .28 In 1 .92 Ga 2 .80 O 12  and La 3 .28 In 2 .16 Ga 2 .56 O 12 . 
     
     
       4. A single crystal having the composition of claim 1, the single crystal being grown by a melt-growth technique involving unidirectional solidification of a melt. 
     
     
       5. A single crystal of claim 4, grown by Czochralski or Bridgman-Stockbarger technique. 
     
     
       6. A composite comprising a single crystal substrate having the composition of claim 1 and a magnetic garnet film bonded thereto. 
     
     
       7. A congruently melting composition of a lanthanum indium gallium garnet having a composition selected from the group consisting of La 3 .32 In 2 .10 Ga 2 .58 O 12  and La 3 .32 In 1 .88 Ga 2 .80 O 12 .

Cited by (0)

No later patents cite this yet.

References (0)

No backward citations on record.