Electronic timepiece

Abstract

An electronic timepiece having a quartz crystal oscillator for producing a time standard signal, a frequency divider, and a display device. A CMOS integrated circuit on an N-type substrate is provided for the elements. A first aluminum lead and a second aluminum lead are provided on the CMOS integrated circuit. The first aluminum lead is provided on the CMOS integrated circuit to connect the high potential side of voltage supply to the N-type substrate. The second aluminum lead is provided on the CMOS integrated circuit for supplying the voltage to a logic circuit in the CMOS integrated circuit. A resistor is provided between the second aluminum lead and high potential side of the voltage supply for preventing the latch-up of the CMOS integrated circuit.

What is claimed is: 
     
       1. A CMOS integrated circuit including a logic circuit for an electric timepiece comprising: an N-type substrate;   a connecting portion provided on said N-type substrate for connecting a high potential side of a voltage supply to said N-type substrate;   a plurality of N +  impurity regions of high impurity concentration formed in said N-type substrate;   a first aluminum lead connected to said impurity regions formed in said N-type substrate, and to said connecting portion for decreasing resistance between said voltage supply and said substrate;   a second aluminum lead provided on said N-type substrate for supplying a voltage to said logic circuit; and   a resistor provided between said second aluminum lead and said connecting portion.   
     
     
       2. The CMOS integrated circuit according to claim 1, wherein said resistor is a diffusion resistor provided in said N-type substrate. 
     
     
       3. The CMOS integrated circuit according to claim 1, wherein said resistor is a polysilicon resistor provided in said N-type substrate. 
     
     
       4. The CMOS integrated circuit according to claim 1, wherein said connecting portion is a bonding pad provided in said N-type substrate. 
     
     
       5. The CMOS integrated circuit according to claim 1, wherein said first aluminum lead is positioned outside the bonding pad and said second aluminum lead is positioned inside the bonding paid.