Dielectric materials

Abstract

A method of manufacturing thin film dielectric material by directing vapors of reactants containing lead and additional metals and an oxidizing gas onto a heated substrate to form a layer of dielectric material thereon, which layer can be of a high dielectric constant (greater than 5000).

I claim: 
     
       1. A method of manufacturing thin film dielectric material comprising the steps of: directing vapors of reactants containing lead and at least two additional metals including Fe and Nb and an oxidizing gas onto a substrate having a temperature at which oxides result from the reaction of the reactants with the oxidizing gas in a solid form on the substrate to form a thin film dielectric material layer thereon.   
     
     
       2. The method of claim 1 wherein said directing step includes so selecting the reactants that the dielectric constant of the layer has a value greater than 5000. 
     
     
       3. The method of claim 1 wherein the additional metals further include metals selected from the group consisting of Mg, Zn, Ni, Co, Ta, W, Sn, Ti and Zr. 
     
     
       4. A method of manufacturing a thin film dielectric material comprising the step of: forming a dielectric layer on a substrate including directing vapors of reactants containing lead and at least two additional metals and an oxidizing gas onto the substrate which is brought to a temperature at which oxides result from the reaction of the reactants with the oxidizing gas in a solid form on the substrate.   
     
     
       5. The method of claim 4 wherein the metals are selected from the group consisting of Mg, Zn, Fe, Ni, Co, Nb, Ta, W, Sn, Ti and Zr. 
     
     
       6. The method of claim 4 wherein at least one of the metals is selected from the group consisting of Fe and Nb.