Semiconductor photoelectric conversion device

Abstract

A semiconductor photoelectric conversion device has a conductive substrate or a first conductive layer formed on a suitable substrate, a non-single-crystal semiconductor laminate member formed on the conductive substrate or first conductive layer, including at least one I-type non-single-crystal semiconductor layer and having formed therein at least one PI, NI, PIN or NIP junction, and a second conductive layer formed on the non-single-crystal semiconductor laminate member. The I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains oxygen, carbon or phosphorus only in such a low concentration as 5×10 18 atoms/cm 3 or less, 4×10 18 atoms/cm 3 or less, or 5×10 15 atoms/cm 3 or less, respectively.

What is claimed is: 
     
       1. A semiconductor photoelectric conversion device comprising: (a) a conductive substrate or (b) a first conductive layer formed on a further substrate;   a non-single-crystal semiconductor laminate member formed on said conductive substrate or said first conductive layer, including at least one I-type non-single-crystal semiconductor layer and having formed therein at least one PI, NI, PIN or NIP junction; and   a second conductive layer formed on said non-single-crystal semiconductor laminate member;   wherein said I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains oxygen in a low concentration of only 5×10 18  atoms/cm 3  or less.   
     
     
       2. A semiconductor photoelectric conversion device comprising: (a) a conductive substrate or (b) a first conductive layer formed on a further substrate;   a non-single-crystal semiconductor laminate member formed on said conductive substrate or said first conductive layer, including at least one I-type non-single-crystal semiconductor layer and having formed therein at least one PI, NI, PIN or NIP junction; and   a second conductive layer formed on said non-single-crystal semiconductor laminate member;   wherein the I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains carbon in a low concentration if only 4×10 18  atoms /cm 3  or less.   
     
     
       3. A semiconductor photoelectric conversion device comprising: (a) a conductive substrate or (b) a first conductive layer formed on a further substrate;   a non-single-crystal semiconductor laminate member formed on said conductive substrate or said first conductive layer, including at least one I-type non-single-crystal semiconductor layer and having formed therein at least on PI, NI, PIN or NIP junction; and   a second conductive layer formed on said non-single-crystal semiconductor laminate member;   wherein said I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains phosphorus in a low concentration of only 5×10 15  atoms/cm 3  or less.   
     
     
       4. A semiconductor photoelectric conversion device according to claim 1, 2, or 3, wherein said I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member is formed of silicon, germanium or Si x  Ge 1-x  (0<x<1). 
     
     
       5. A semiconductor photoelectric conversion device according to claim 4, wherein said I-type non-single-crystal semiconductor layer of the non-single-crystal semiconductor laminate member contains hydrogen or a halogen as a recombination center neutralizer.