X-ray dispersive and reflective structures and method of making the structures

Abstract

X-ray dispersive and reflective structures and materials are provided which exhibit improved resolution and reflectivity in specific ranges of interest without substantial fluorescence or absorption edges. The structures are formed of metallic and non-metallic layer pairs and can include a buffer layer between each layer to prevent interdiffusion to stabilize the structures. The materials can be thermally activated to control the desired properties, during or post deposition. The structures can be deposited by ion beam absorption techniques to form the structures in a precise manner. The index of the refraction of the structures can be continuously varying throughout the structures.

What is claimed and desired to be secured by Letters Patent of the United States is: 
     
       1. An improved X-ray dispersive structure comprising: a plurality of layer pairs formed on one another, said layer pairs having X-ray dispersive properties over a predetermined range of interest, one layer of each of said layer pairs is a non-metallic material chosen from the group consisting of Si, C, B, and B 4  C and the second layer of each of said layer pairs is a metallic material, and a buffer layer formed of a material different from the materials forming the first and second layers, chosen from the group consisting of Si, Ge, and SiGe, and having a thickness of 1.3 Angstroms to 5 Angstroms between each metallic and non-metallic layer to provide control of interdiffusion or chemical interaction between said metallic and non-metallic layers. 
     
     
       2. The structure as defined in claim 1 wherein: said buffer layer is formed from Si.   
     
     
       3. A method of making an improved X-ray dispersive structure comprising: forming a plurality of layer pairs on one another to have X-ray dispersive properties over a predetermined range of interest, forming one layer of each of said layer pairs of a non-metallic material chosen from the group consisting of Si, C, B and B 4  C, forming the second layer of each of said layer pairs from a metallic material, and forming a buffer layer formed of a material different from the materials, forming the first and second layers, chosen from the group consisting of Si, Ge, and SiGe, and having a thickness of 1.3 Angstroms to 5 Angstroms between each metallic and non-metallic layer to provide control of interdiffusion or chemical interaction between said metallic and non-metallic layers.   
     
     
       4. The method as defined in claim 3 including: forming said buffer layer from Si.   
     
     
       5. An improved X-ray dispersive structure comprising: a plurality of layer pairs formed on one another, said layer pairs having X-ray dispersive properties over a predetermined range of interest, one layer of each of said layer pairs consisting essentially of boron and the second layer of each of said layer pairs is formed from a metallic material and said metallic material layer contains at least Hf.   
     
     
       6. The structure as defined in claim 5 wherein: said layer consisting essentially of boron further includes carbon.   
     
     
       7. A method of making an improved X-ray dispersive structure comprising: forming a plurality of layer pairs on one another to have X-ray dispersive properties over a predetermined range of interest, including forming one layer of each of said layer pairs from essentially boron and forming the second layer of each of said layer pairs from a metallic material and forming said metallic material layer from at least Hf.   
     
     
       8. The method as defined in claim 7 including: forming said layer consisting essentially of boron and including carbon therein.   
     
     
       9. A method of making an improved X-ray dispersive structure comprising: forming a plurality of layer pairs on one another to have X-ray dispersive properties over a predetermined range of interest, including boron in one layer of each of said layer pairs and forming the second layer of each of said layer pairs from a metallic material, including forming said boron including layer from B 4  C.   
     
     
       10. The method as defined in claim 9 including: said predetermined range of interest including wavelengths of 9.75Å to 44.7Å.   
     
     
       11. An improved X-ray dispersive structure comprising: a plurality of layer pairs formed on one another, said layer pairs having X-ray dispersive properties over a predetermined range of interest, one layer of each of said layer pairs includes boron and the second layer of each of said layer pairs is formed from a metallic material, said boron including layer is B 4  C.   
     
     
       12. The structure as defined in claim 11 wherein: said predetermined range of interest includes wavelengths of 9.75Å to 44.7Å.   
     
     
       13. An improved X-ray dispersive structure comprising: a plurality of layer pairs formed on one another, said layer pairs having X-ray dispersive properties over a predetermined range of interest, one layer of each of said layer pairs includes carbon and the second layer of each of said layer pairs is formed from a metallic material, said metallic material containing at least Hf and a buffer layer formed of a material selected from the group consisting of Si, Ge and SiGe and having a thickness of 1.3 Angstroms to 5 Angstroms between each said one layer and said second layer.   
     
     
       14. The structure as defined in claim 13 wherein: said metallic material is Hf:W.   
     
     
       15. The structure as defined in claim 13 wherein: said metallic material layer includes at least one of the group consisting of Ta, Pt, Ir and Au.   
     
     
       16. The structure as defined in claim 13 wherein: said predetermined range of interest includes wavelengths of 9.75Å to 19Å.   
     
     
       17. A method of making an improved X-ray dispersive structure comprising: forming a plurality of layer pairs on one another to have X-ray dispersive properties over a predetermined range of interest, including carbon 1n one layer of each of said layer pairs and forming the second layer of each of said layer pairs from a metallic material, said metallic material containing at least Hf and forming a buffer layer of a material selected from the group consisting of Si, Ge and SiGe and having a thickness of 1.3 Angstroms to 5 Angstroms between each said one layer and said second layer.   
     
     
       18. The method as defined in claim 17 including: forming said metallic material layer of Hf:W.   
     
     
       19. The method as defined in claim 17 including: forming said metallic material layer from at least one of the group consisting of Ta, Pt, Ir and Au.   
     
     
       20. The method as defined in claim 17 including: said predetermined range of interest includes wavelengths of 9.75Å to 19Å.