Irradiation cross-linkable thermostable polymer system, for microelectronic applications

Abstract

Linear fluorooligomers having at least two reactive end groups per polymer molecule are incorporated into radiation sensitive polymer systems which have improved continuous temperature resistance and low dielectric constant. The polymer systems can be applied as lacquers. Preferably perfluorated poly-ethers and perfluorated alkanes are used as starting compounds. The polymeric product is usable as a coating for the production of printed multi-layer wirings and economises on through-bores and additional copper intermeidate layers. A further field of application exists in the field of integrated semiconductor ciruits in VLSI-technology for the production of negative photo-resists.

We claim: 
     
       1. A process for the production of a multi-layered wiring laminate using a polymer system comprising an irradiation cross-linkable thermostable polymer for use in the manufacture of multi-layer wiring systems having a reaction product of a fluorinated linear oligomer having at least two reactive end groups per polymer molecule with a radiation-sensitive substance the process comprising the steps of: (a) coating a metal foil with said polymer (b) imaging such coating with a desired wiring pattern by irradiation with masked light, (c) dissolving away the non-irradiated portions of such resulting irradiated coating to produce a developed wiring image in the resulting coating, (d) electroplating portions of said metal foil where such portions are exposed through said developed resulting coating, and (e) depositing over the resulting so electroplated surface at least one additional coating of said polymer, and (f) repeating said steps (b), (c), and (d) with respect to each said additional coating, thereby to produce a desired multilayered wiring laminate. 
     
     
       2. The process of claim 1 wherein said irradiation is effected with UV-light using masks in a contact or a projection method. 
     
     
       3. The process of claim 1 wherein said dissolving is carried out with a halogenated hydrocarbon. 
     
     
       4. The process of claim 3 wherein said halogenated hydrocarbon is a chlorofluorocarbon. 
     
     
       5. The process of claim 1 wherein, after step (c) and before step (d) the resulting construction is exposed to a temperature ranging from about 40° to 150° C. 
     
     
       6. In a process for the production of negative photo-resist layers in the production of integrated semiconductor circuits in VLSI-technology, the improvement which comprises employing as the negative photo-resist layers an irradiation cross-linkable thermostable polymer for use in the manufacture of multilayer wiring systems comprising a reaction product of a fluorinated linear oligomer having at least two reactive end groups per polymer molecule with a radiation-sensitive substance.