Producing a compound semiconductor device on an oxygen implanted silicon substrate

Abstract

A production method for producing a semiconductor device by growing a crystalline compound semiconductor on a monocrystalline silicon substrate is comprised of a step for forming a transition domain varying from a monocrystalline silicon layer to a polycrystalline silicon layer in the silicon substrate by implanting oxygen ions into the silicon substrate and annealing the silicon substrate and a step for depositing a compound semiconductor layer on the silicon substrate.

What is claimed is: 
     
       1. A production method for producing a semiconductor device by growing a crystalline compound semiconductor for forming a functional device on a surface of a substrate of monocrystalline silicon comprising the following steps: step for forming a transition domain for terminating misfit dislocation caused upon the crystalline growth of said compound semiconductor which varies from monocrystalline silicon to polycrystalline silicon in the direction of depth of said substrate when seen from said surface thereof, said transition domain being formed by implanting oxygen ions into said monocrystalline substrate, and annealing said implanted substrate to form a buried oxidized silicon (SiO 2 ) leaving a monocrystalline silicon layer between said buried SiO 2  layer and said surface of said substrate; and   step for depositing a compound semiconductor layer on said surface of said substrate.   
     
     
       2. A production method as claimed in claim 1, wherein said compound semiconductor is a compound semiconductor of groups III-V. 
     
     
       3. A production method as claimed in claim 2, wherein said compound semiconductor of groups III-V is a GaAs monocrystalline semiconductor. 
     
     
       4. A production method as claimed in claim 1, wherein said compound semiconductor is a compound semiconductor of groups II-VI. 
     
     
       5. A production method as claimed in claim 1, wherein the thickness of the monocrystalline silicon layer left between said surface and the polycrystalline silicon layer is controlled so as to be thinner than 1,000 Å. 
     
     
       6. A production method as claimed in claim 1, further includes step for annealing the substrate after depositing said compound semiconductor thereon.