Short channel CMOS on 110 crystal plane

Abstract

A monocrystalline silicon substrate having a (110) crystal plane is prepared. A CMOS transistor is formed on this substrate. An N channel MOS transistor and a P channel MOS transistor are formed in the surface of the semiconductor substrate. In each of these transistors the channel length is 1.5 μm or less and the velocity saturation phenomenon of electrons is outstanding.

What is claimed is: 
     
       1. A semiconductor device of a CMOS type comprising: a silicon substrate having a (110) crystal plane; and at least one CMOS transistor formed in said substrate, each CMOS transistor having a N channel MCS transistor which is formed on said (110) plane of said substrate and whose channel length is 1.5 μm or less, and a P channel MOS transistor formed in said silicon substrate.   
     
     
       2. A CMOS type semiconductor device according to claim 1, wherein said substrate has a P type well region, and said N channel MOS transistor is formed in said P type well region. 
     
     
       3. A CMOS type semiconductor device according to claim 1, wherein the channel length of said N channel MOS transistor is 1 μm or less. 
     
     
       4. A CMOS type semiconductor device according to claim 1, wherein the channel length of said N channel MOS transistor is 0.8 μm.