Semiconductor IC device with polysilicon resistor

Abstract

A semiconductor integrated circuit device includes: an active device, such as a bipolar transistor and a resistor formed of a first silicon layer formed on a thick insulating film on the semiconductor substrate. A metal silicide film is formed on the surface of said first silicon layer for connection between the first silicon layer and an interconnection layer. The interconnection layer has contact with a first and a second part of the metal silicide film formed on a opposited sides of an isulating film on first silicon layer. The part of the first silicon layer under the insulation film and between the first and second parts of the metal silicide film forms the resistor.

What is claimed is: 
     
       1. A semiconductor integrated circuit device comprising: a semiconductor substrate:   a semiconductor device formed on said semiconductor substrate and having at least one PN junction;   a resistor formed of a first silicon layer formed on an insulating film on the semiconductor substrate; and   a metal silicide film formed on the surface of said first silicion layer; and   an interconnection layer distinct from said metal silicide film and coupled to said metal silicide film and said semiconductor device for providing an electrical communication path between said resistor and said semiconductor device.   
     
     
       2. A semiconductor integrated circuit device according to claim 1, wherein the first silicon layer is covered with a second insulating film except where the metal silicide film is formed. 
     
     
       3. A semiconductor integrated circuit device according to claim 1, wherein the interconnection layer has contact with the metal slicide film formed on a first part of the first silicon layer, and has contact with the semiconductor device. 
     
     
       4. A semiconductor integrated circuit device according to claim 3, further comprising an insulating film covering the first silicon layer, except where the metal silicide film is formed, and a passivation film covering part of the metal silicide film adjacent the insulating film, wherein said interconnection layer has contact with a first part of the metaol silicide film not covered by the passivation film. 
     
     
       5. A semiconductor integrated circuit device according to claim 4, wherein the interconnection layer has contact with a second part of the metal silicide film formed on a second part of the first silicon layer, said second part of the metal silicide film being separated by the insulating film from said first part of the metal silicide film, whereby part of the first silicon layer under the insulation film and between said first and second parts of the metal silicide film forms the resistor. 
     
     
       6. A semiconductor integrated circuit device according to claim 4, wherein the insulating film is a silicon oxide film. 
     
     
       7. A semiconductor integrated circuit device according to claim 4, wherein the semiconductor device is a bipolar transistor having a base region, and the metal silicide film has contact with the base region of the bipolar transistor. 
     
     
       8. A semiconductor integrated circuit device according to claim 3, wherein the semiconductor device is bipolar transistor having a base region, an emitter region and a collector region;   the semiconductor integrated circuit device further comprises a second silicon layer formed over the emitter region on the semiconductor substrate; and   the metal silicide film is further formed on said second silicon layer.   
     
     
       9. A semiconductor integrated circuit device according to claim 8, wherein the transistor comprises a first window for the introduction of impurities into the emitter region and a second window for the base contact.   
     
     
       10. A semiconductor integrated circuit device according to claim 1, wherein the first silicon layer is a polysilicon layer. 
     
     
       11. A semiconductor integrated circuit device comprising: a semiconductor substrate;   an insulating layer formed on the semiconductor substrate;   a first silicon layer formed on the insulating layer;   a first metal silicide film and a second metal silicide film formed on the first silicon layer, wherein a portion of the first silicon layer is not covered by said first metal silicide film and said second metal silicide film thereby separating said first metal silicide film and said second metal silicide film and forming a resistor on said first silicon layer, and   an interconnection layer distinct from said first metal silicide film and coupled to said first metal silicide film and a semiconductor device formed on said semiconductor substrate for providing an electrical communication path between said resistor and said semiconductor device;   said first metal silicide film and said second metal silicide film forming a pair of electrodes for the resistor.   
     
     
       12. A semiconductor integrated circuit device according to claim 11, wherein the first silicon layer is covered with an insulating film except where the metal silicide film is formed. 
     
     
       13. A semiconductor device according to claim 11, wherein said semiconductor substrate is a silicon substrate and said insulating layer is a silicon oxide. 
     
     
       14. A semiconductor integrated circuit device according to claim 12 wherein said first silicon layer is a polysilicon. 
     
     
       15. A semiconductor integrated circuit device comprising; a semiconductor substrate;   a semiconductor device formed on said semiconductor substrate and having at least one PN junction;   a first silicon layer formed on an insulating film on the semiconductor substrate;   a metal silicide film formed on the surface of said first silicon layer;   an interconnection layer distinct from said metal silicide film and coupled to said metal silicide film and said semiconductor device; and   a resistor formed from at least one window opened in said metal silicide film,   wherein said resistor is in electrical communication with said semiconductor device by way of said interconnection layer.