US4985051AExpiredUtility
Diamond compacts
Est. expiryAug 24, 2004(expired)· nominal 20-yr term from priority
Inventors:Alfred E. Ringwood
C04B 2235/3839C22C 26/00C04B 2235/428C04B 2235/77C04B 2235/3826B01J 2203/0655C04B 35/6316C04B 2235/3847C04B 2235/404C04B 2235/6562C04B 35/645C04B 2235/96C04B 2235/6567C04B 2235/427C04B 2235/656C04B 2235/5436C04B 2235/721C04B 2235/80B01J 2203/062C04B 35/52C04B 2235/5472C04B 2235/3843B01J 2203/0685C04B 35/6303B01J 3/062
97
PatentIndex Score
146
Cited by
9
References
7
Claims
Abstract
Diamond compact composed of 60-95 volume % diamond crystals plastically deformed into a closely packed, rigid structure with contacts between the diamond crystals over extended mating surfaces arising from the plastic deformation. The diamond crystals are bonded together by an interstitial bonding material composed of a refractory carbide, such as silicon carbide, or a bonding material composed of a metal such as rhenium and a refractory carbide formed by reaction of a metallic bonding agent, such as tungsten, with carbon.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. A diamond compact for cutting, turning, drilling, and otherwise working ultra-hard ceramics, carbides and rocks comprised to 60-95 volume percent of diamond crystals which have been plastically deformed so that they form a closely packed framework structure in which contacts between diamond crystals occur over extended mating surfaces arising from plastic deformation of the diamond crystals during formation of the compact under pressure and temperature conditions within the graphite stability field, the diamond crystals being bonded together by interstitial bonding material comprised of (1) a metal selected from the group consisting of rhenium, rhodium, ruthenium, iridium, osmium and platinum which has accepted carbon from the diamond crystals into solid solution and has formed a bond having a melting point exceeding 1600° C., and (2) a refractory carbide formed by reaction of a metallic bonding agent with carbon in the diamond crystals during formation of the compact under said pressure and temperature conditions, said compacting comprising less than about 2 percent volume of graphite and possessing a compressive strength greater than 10 kbars.
2. A diamond compact as claimed in claim 1, wherein said metal is rhenium and said metallic bonding agent is tungsten.
3. A diamond compact as claimed in claim 1, wherein said metal is iridium and said metallic bonding agent is tungsten.
4. A diamond compact for cutting, turning, drilling, and otherwise working ultra-hard ceramics, carbides and rocks, comprises of 60-95 volume percent of diamond crystals which have been plastically deformed so that they form a closely packed rigid structure in which contacts between the diamond crystals occur over extending mating surfaces arising from plastic deformation of the diamond crystal during formation of the compact under pressure and temperature conditions within the graphite stability field, the diamond crystals being bonded together by interstitial bonding material comprising a refractory carbide formed by reaction of a bonding agent with carbon in the diamond crystals during formation of the compact under said pressure and temperature conditions, said carbide having a minimum melting point greater than 1600° C. in the presence of carbon and said compact comprising less than about 2 percent volume of graphite and possessing a compressive strength greater than 10 kbars.
5. A diamond compact for cutting, turning, drilling and otherwise working ultra-hard ceramics, carbides and rocks, comprised of 60-95 volume percent of diamond crystals which have been plastically deformed so that they form a closely packed rigid structure in which contacts between the diamond crystals occur over extended mating surfaces arising from plastic deformation of the diamond crystals during formation of the compact under pressure and temperature conditions within the graphite stability field, the diamond crystals being bonded together by interstitial bonding materials comprising silicon carbide formed by reaction of a silicon rich bonding agent with carbon in the diamond crystals during formation of the compact under said pressure and temperature conditions, said silicon carbide having a minimum melting point greater than 1600° C. in the presence of carbon and said compact comprising less than about 2 percent volume of graphite and possessing a compressive strength greater than 10 kbars.
6. A diamond compact for cutting, turning, drilling, and otherwise working ultra-hard ceramics, carbides and rocks comprised of 60 to 95 volume percent of diamond crystals which have been plastically deformed so that they form a closely packed framework structure in which contacts between diamond crystals occur over extended mating surfaces arising from plastic deformation of the diamond crystals during formation of the compact under pressure and temperature conditions within the graphite stability field, the diamond crystals being bonded together by interstitial bonding material comprised of a metal selected from the group consisting of rhenium, rhodium, ruthenium, iridium, osmium and platinum which has accepted carbon from the diamond crystals into solid solution and has formed a bond having a melting point exceeding 1600° C., said compact comprising less than about 2 percent volume of graphite and possessing a compressive strength greater than 10 kbars.
7. A diamond compact as claimed in claim 6 wherein said metal is rhenium.Cited by (0)
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