Process for producing electron emission device

Abstract

A process for producing an electron emission device having voltage controlled negative resistance (VCNR) characteristics. A conductive thin film containing fine particles of a metal, metal oxide, semiconductor or the like is formed on a substrate between opposing electrodes which are also form on the substrate. A voltage is applied across the conductive thin film to generate heat with which the conductive thin film is heat treated to have an island structure which is formed of a spatially discontinuous film of fine particles and which serves as an electron emitting region.

What is claimed is: 
     
       1. A process for producing an electron emission device having opposing electrodes arranged on a substrate and an electron emitting region formed between said opposing electrodes, the forming of said electron emitting region comprising the steps of: forming a conductive thin film containing fine particles of particle sizes ranging between several tens of Angstroms (Å) and several micrometers (μm) between the opposing electrodes; and   effecting a heat treatment on said conductive thin film by supplying electric current to said conductive thin film.   
     
     
       2. A process according to claim 1, wherein the distance between the opposing electrodes ranges between 1000Å and 10 μm. 
     
     
       3. A process according to claim 1, wherein said conductive thin film containing said fine particles is formed to exhibit an electrical resistance ranging between 1.0×10 4  Ω/□ and 2.0×10 7  Ω/□ in terms of sheet resistance. 
     
     
       4. A process according to claim 1, wherein said conductive thin film is formed by a gas deposition technique or a dispersion application technique. 
     
     
       5. A process according to claim 1, wherein said heat treatment is effected by applying a total voltage of 4 V to 14 V across said conductive thin film. 
     
     
       6. A process according to claim 1, wherein said heat treatment is conducted in a vacuum or in an inert gas atmosphere. 
     
     
       7. A process for producing an electron emission device having opposing electrodes arranged on a substrate and an electron emitting region formed between said opposing electrodes, the forming of said electron emitting region comprising the steps of: forming a conductive thin film containing fine particles of particle sizes ranging between several tens of Angstroms (Å) and several micrometers (μm) between the opposing electrodes; and   effecting a heat treatment on said conductive thin film by supplying electric current to said conductive thin film to form a conductive thin film showing voltage controlled negative resistance characteristics between said electrodes.   
     
     
       8. A process according to claim 7, wherein the distance between the opposing electrodes ranges between 1000Å and 10 μm. 
     
     
       9. A process according to claim 7, wherein said conductive thin film containing said fine particles is formed to exhibit an electrical resistance ranging between 1.0×10 4  Ω/□ and 2.0×10 7  Ω/□ in terms of sheet resistance. 
     
     
       10. A process according to claim 7, wherein said conductive thin film is formed by gas a deposition technique or a dispersion application technique. 
     
     
       11. A process according to claim 7, wherein said heat treatment is effected by applying a total voltage of 4 V to 14 V across said conductive thin film. 
     
     
       12. A process according to claim 7, wherein said heat treatment is conducted in a vacuum or in an inert gas atmosphere. 
     
     
       13. A process for producing an electron emission device having opposing electrodes arranged on a substrate and an electron emitting region formed between said opposing electrodes, the forming of said electron emitting region comprising the steps of: forming a conductive thin film containing fine particles of particle sizes ranging between several tens of Angstroms (Å) and several micrometers (μm) between the opposing electrodes; and   effecting a heat treatment on said conductive thin film by supplying electric current to said conductive thin film, to form a conductive thin film spatially discontinuous and electrically connected, between said electrodes.   
     
     
       14. A process for producing an electron emission device having opposing electrodes arranged on a substrate and an electron emitting region formed between said opposing electrodes, the forming of said electron emitting region comprising the steps of: forming a conductive thin film containing fine particles of particle sizes ranging between several tens of Angstroms (Å) and several micrometers (μm) between said electrodes; and   effecting a heat treatment on said conductive thin film by supplying electric current to said conductive thin film, to form a conductive thin film spatially discontinuous and electrically connected and showing voltage controlled negative resistance characteristics, between said electrodes.   
     
     
       15. A process for producing an electron emission device having opposing electrodes arranged on a substrate and an electron emitting region formed between said opposing electrodes comprising the steps of: forming a conductive thin film containing fine particles of particle sizes ranging between several tens of Angstroms (Å) and several micrometers (μm) between said electrodes; and   supplying a voltage to said conductive thin film.   
     
     
       16. A process according to claim 15, wherein the distance between the opposing electrodes ranges between 1000Å and 10 μm. 
     
     
       17. A process according to claim 15, wherein said conductive thin film containing said fine particles is formed to exhibit an electrical resistance ranging between 1.0×10 4  Ω/□ and 2.0×10 7  Ω/□ in terms of sheet resistance. 
     
     
       18. A process according to claim 15, wherein said conductive thin film is formed by gas deposition technique or dispersion application technique. 
     
     
       19. A process according to claim 15, wherein said heat treatment is effected by applying a total voltage of 4 V to 14 V across said conductive thin film. 
     
     
       20. A process according to claim 15, wherein said supplying a voltage is conducted in a vacuum or in an inert gas atmosphere. 
     
     
       21. A process for producing an electron emission device having opposing electrodes arranged on a substrate and an electron emitting region formed between said opposing electrodes, the forming of said electron emitting region comprising the steps of: forming a conductive thin film containing fine particles of particle sizes ranging between several tens of Angstroms (Å) and several micrometers (μm) between said electrodes; and   supplying a voltage of said conductive thin film to form a conductive film showing voltage controlled negative resistance characteristics between said electrodes.   
     
     
       22. A process according to claim 21, wherein the distance between the opposing electrodes ranges between 1000Å and 10 μm. 
     
     
       23. A process according to claim 21, wherein said conductive thin film containing said fine particles is formed to exhibit an electrical resistance ranging between 1.0×10 4  Ω/□ and 2.0×10 7  Ω/□ in terms of sheet resistance. 
     
     
       24. A process according to claim 21, wherein said conductive thin film is formed by a gas deposition technique or a dispersion application technique. 
     
     
       25. A process according to claim 21, wherein said heat treatment is effected by applying a total voltage of 4 V to 14 V across said conductive thin film. 
     
     
       26. A process according to claim 21, wherein said supplying a voltage is conducted in a vacuum or in an inert gas atmosphere. 
     
     
       27. A process for producing an electron emission device having opposing electrodes arranged on a substrate and an electron emitting region formed between said opposing electrodes, the forming of said electron emitting region comprising the steps of: forming a conductive thin film containing fine particles of particle sizes ranging between several tens of Angstroms (Å) and several micrometers (μm) between said electrodes; and   supplying a voltage of said conductive thin film, to form a conductive thin film spatially discontinuous and electrically connected, between said electrodes.   
     
     
       28. A process for producing an electron emission device having opposing electrodes arranged on a substrate and an electron emitting region formed between said opposing electrodes, the forming of said electron emitting region comprising the steps of: forming a conductive thin film containing fine particles of particle sizes ranging between several tens of Angstroms (Å) and several micrometers (μm) between said electrodes; and   supplying a voltage of said conductive thin film, to form a conductive film spatially discontinuous and electrically connected and showing voltage controlled negative resistance characteristics, between said electrodes.