Solid film growth apparatus

Abstract

A solid film forming apparatus, e.g., an MO-MBE (Metal-Organic Molecular Beam Epitaxy) apparatus, wherein evacuatable containers isolated from a growth chamber by a switching device and connected to raw material gas introduction pipings are provided between the growth chamber for a solid film, e.g., a compound semiconductor, and raw material gas introduction pipings. Growth of the solid film is controlled by opening and closing the switching device and evacuating the container at least while the switching device is closed during the growth of the solid film. An undesired influence on the growing film due to residual gas in the containers which are not used for growth can be prevented and, hence, interception and introduction of the raw material gas into the growth chamber can be performed with remarkably high controllability, and films of superior abruptness of the interface between films, e.g., the heterojunction of the compound semiconductor, can be obtained.

What is claimed is: 
     
       1. A compound semiconductor growth apparatus for growth of a compound semiconductor using an organometallic gas as a raw material gas in a vacuum satisfying molecular flow conditions, comprising: a first container for growth of the compound semiconductor, switching devices for controlling introduction of the raw material gas, second containers isolated from the gas in said first container by said switching devices, raw material gas-introduction pipings connected to said second containers, and at least one evacuation facility for evacuation of and separately and directly connected to each of said first container and second containers. 
     
     
       2. A compound semiconductor growth apparatus according to claim 1, wherein the evacuation facility can evacuate the second containers throughout the growth of the compound semiconductor. 
     
     
       3. A compound semiconductor growth apparatus according to claim 1, wherein the evacuation facility which evacuates the second containers provides a degree of ultimate vacuum higher than 1×10 -8  Torr. 
     
     
       4. A compound semiconductor growth apparatus according to claim 1, wherein a plurality of evacuation facilities are provided and separate evacuation facilities are connected to each of said first container and said second containers. 
     
     
       5. A compound semiconductor growth apparatus according to claim 1, wherein said switching devices are located so as to enable said raw material gas to be completely intercepted and not introduced into said first container, and wherein said raw material gases may be evacuated from said second container by said at least one evacuation facility. 
     
     
       6. A metal-organic beam epitaxy apparatus for growing a compound semiconductor using at least one organometallic gas as a raw gas, comprising: a first chamber for growth of the compound semiconductor, which can be evacuated to satisfy molecular flow conditions;   at least one second chamber having an opening which opens into the first chamber;   switching means provided at the opening of each second chamber, for isolating the at least one second chamber from the first chamber, and for controlling the introduction of the raw material gas from the at least one second chamber to the first chamber;   raw material gas introducing pipings connected to each second chamber; and   at least one evacuation means for evacuating and being separately and directly connected to each of the first chamber and the at least one second chamber.   
     
     
       7. An apparatus according to claim 6, wherein a separate evacuation means is connected to the first chamber and each second chamber. 
     
     
       8. An apparatus according to claim 6, wherein the evacuation means can evacuate the at least one second chamber throughout the growth of the compound semiconductor. 
     
     
       9. An apparatus according to claim 6, wherein the evacuation means for the at least one second chamber provides a degree of ultimate vacuum higher than 1×10 -8  Torr. 
     
     
       10. An apparats according to claim 6, wherein the switching means are gate valves. 
     
     
       11. An apparatus according to claim 6, further including cracking cells in contact with the gas introduction pipings to enable cracking of the raw material gases. 
     
     
       12. An apparatus according to claim 6, wherein the evacuation means evacuates the first chamber and the at least one second chamber simultaneously. 
     
     
       13. An apparatus according to claim 6, wherein the evacuation means evacuates the at least one second chamber when the at least one second chamber is isolated from the first chamber by the switching means provided at the opening of each second chamber, while molecular flow conditions are maintained in the first chamber. 
     
     
       14. An apparatus according to claim 6, wherein said switching means are located such that said raw material gas may be completely intercepted and not introduced into said first chamber, and wherein said at least one evacuation means can evacuate all of the raw material gas flowing into said second chamber. 
     
     
       15. A compound semiconductor growth apparatus for growth of a compound semiconductor using at least one raw material gas in a vacuum satisfying molecular flow conditions, comprising: a first container for growth of the compound semiconductor, at least one switching device for controlling introduction of the raw material gas, at least one second container isolated from the gas in said first container by said switching device, at least one raw material gas-introduction piping connected to said second container, and at least one evacuation facility for evacuation of and separately and directly connected to each of said first container and said at least one second container. 
     
     
       16. A compound semiconductor growth apparatus according to claim 15, wherein the evacuation facility can evacuate the at least one second container throughout the growth of the compound semiconductor. 
     
     
       17. A compound semiconductor growth apparatus according to claim 15, wherein a plurality of evacuation facilities are provided and separate evacuation facilities are connected to each of the first container and the at least one second container. 
     
     
       18. A compound semiconductor growth apparatus according to claim 15, wherein said switching devices are located so as the enable said raw material gas to be completely intercepted and not introduced into said first container, and wherein said raw material gases may be evacuated from said at least one second container by said at least one evacuation facility. 
     
     
       19. A semiconductor growth apparatus for growth of a semiconductor using at least one raw material gas in a vacuum satisfying molecular flow conditions, comprising: a first container for growth of the compound semiconductor, at least one switching device for controlling introduction of the raw material gas, at least one second container isolated from the gas in said first container by said switching device, at least one raw material gas-introduction piping connected to said second container, and at least one evacuation facility for evacuation of and separately and directly connected to each of said first container and said at least one second container. 
     
     
       20. A semiconductor growth apparatus according to claim 19, wherein the evacuation facility can evacuate the at least one second container throughout the growth of the semiconductor. 
     
     
       21. A semiconductor growth apparatus according to claim 19, wherein a plurality of evacuation facilities are provided and wherein separate evacuation facilities are connected to each of said first container and said at least one second container. 
     
     
       22. A semiconductor growth apparatus according to claim 19, wherein said switching devices are located so as to enable said raw material gas to be completely intercepted and not introduced into said first container, and wherein said raw material gases may be evacuated from said at least one second container by said at least one evacuation facility. 
     
     
       23. A solid film forming apparatus for growth of a solid film using at least one raw material gas in a vacuum satisfying molecular flow conditions, comprising: a first container for growth of the solid film, at least one switching device for controlling introduction of the raw material gas, at least one second container isolated from the gas in said first container by said switching device, at least one raw material gas-introduction piping connected to said second container, and at least one evacuation facility for evacuation of and separately and directly connected to each of said first container and said at least one second container. 
     
     
       24. A solid film forming apparatus according to claim 23, wherein the evacuation facility can evacuate the at least one second container throughout the growth of the solid film. 
     
     
       25. A solid film forming apparatus according to claim 23, wherein a plurality of evacuation facilities are provided and separate evacuation facilities are connected to each of said first container and said at least one second container. 
     
     
       26. A solid film forming apparatus according to claim 23, wherein said switching devices are located so as to enable said raw material gas to be completely intercepted and not introduced into said first container, and wherein said raw material gases may be evacuated from said at least one second container by said at least one evacuation facility.