Multiple resistivity wiring apparatus

Abstract

A ceramic multilayer wiring substrate is provided on which the metallized wirings are partially altered to provide multiple resistivities without changing the other electrical properties associated with a particular physical wiring geometry. Sequentially positioning conductive materials of different resistivities along the length of each individual wiring produces a final wiring pattern where each individual wiring can have a different resistance from the other wirings. A multiple resistivity wiring pattern can maximize the operation of a semiconductor chip attached thereto, for example, by reducing the effect of electronic noise on the semiconductor.

What is claimed is: 
     
       1. A wiring apparatus comprising: a substrate formed of an electrically insulative ceramic;   a pattern formed on a surface of said substrate, said pattern including   a plurality of first wirings composed of a first metallized material having an electrical resistivity of a first value; and   a plurality of second wirings composed of a second metallized material having an electrical resistivity of a second value different from said first value.   
     
     
       2. The wiring apparatus according to claim 1, wherein the wiring pattern further includes a plurality of third wirings, each composed of said first metallized material and said second metallized material, said second metallized material being in electrical contact with said first metallized material. 
     
     
       3. The wiring apparatus according to claim 1, wherein each of said first and second metallized materials is composed of a high melting-point metal and an insulating refractory material, said insulating refractory material in said first metallized material being of a different percentage by weight than said second metallized material, said insulating refractory material being no greater than approximately 30 percent by weight for each of said first and second metallized materials. 
     
     
       4. The wiring apparatus according to claim 1, wherein said high melting-point metal includes molybdenum. 
     
     
       5. The wiring apparatus according to claim 1, wherein said high melting-point metal includes tungsten. 
     
     
       6. A multilayer wiring apparatus, comprising: a multilayer substrate including a plurality of laminated layers, said laminated layers formed of an electrically insulative ceramic;   a plurality of first wirings forming a pattern and composed of a first metallized material having an electrical resistivity of a first value, said plurality of first wirings being formed on a surface of a first layer; and   a plurality of second wirings forming a pattern and composed of a second metallized material having an electrical resistivity of a second value, said plurality of second wirings being formed on a surface of a second layer.   
     
     
       7. The multilayer wiring apparatus according to claim 6, further including a plurality of third wirings, each composed on said first metallized material and said second metallized material, said second metallized material being in electrical contact with said first metallized material. 
     
     
       8. The multilayer wiring apparatus according to claim 7, wherein said both first metallized material and said second metallized material of the third wirings are formed on a same layer. 
     
     
       9. The multilayer wiring apparatus according to claim 7, wherein said first metallized material and said second metallized material of the third wirings are formed on different layers. 
     
     
       10. The multilayer wiring apparatus according to claim 6, wherein each of said first and second metallized materials is composed of a high melting-point metal and a insulating refractory material, said insulating refractory material in said first metallized material being of a different percentage by weight than said second metallized material, said insulating refractory material being no greater than approximately 30 percent by weight for each of said first and second metallized materials. 
     
     
       11. The multilayer wiring apparatus according to claim 6, wherein said high melting-point metal includes molybdenum. 
     
     
       12. The multilayer wiring apparatus according to claim 6, wherein said high melting-point metal includes tungsten. 
     
     
       13. The multilayer wiring apparatus according to claim 6, wherein said ceramic comprises alumina (Al 2  O 3 ). 
     
     
       14. The multilayer wiring apparatus according to claim 6, wherein said ceramic comprises aluminum nitride (AlN). 
     
     
       15. The multilayer wiring apparatus according to claim 6, wherein said ceramic comprises tinania (TiO 2 ). 
     
     
       16. The multilayer wiring apparatus according to claim 6, wherein said ceramic comprises beryllia (BeO). 
     
     
       17. The wiring apparatus according to claim 1, wherein said ceramic comprises alumina (Al 2  O 3 ). 
     
     
       18. The wiring apparatus according to claim 1, wherein said ceramic comprises aluminum nitride (AlN). 
     
     
       19. The wiring apparatus according to claim 1, wherein said ceramic comprises titania (TiO 2 ). 
     
     
       20. The wiring apparatus according to claim 1, wherein said ceramic comprises beryllia (BeO).