US5173392AExpiredUtility
Forming a pattern on a substrate
Est. expiryAug 28, 2009(expired)· nominal 20-yr term from priority
H10W 70/05H05K 2203/025H05K 2203/0353H05K 3/107H05K 3/045H05K 2203/0195H05K 2201/0317H05K 3/06
58
PatentIndex Score
27
Cited by
9
References
5
Claims
Abstract
A pattern is formed on a substrate by providing on the substrate a dielectric composition; defining a pattern in said dielectric; depositing metal and then micromachining the metal to provide the desired pattern on the substrate.
Claims
exact text as granted — not AI-modifiedWhat is claimed is:
1. A process for forming a metallic pattern on a substrate for the fabrication of thin film structure for multichip packaging which comprises: a. providing a metal onto a substrate; b. micromachining the metal down to a desired thickness; c. depositing a photoresist layer on said metal; d. defining desired pattern of circuit channels in said photoresist; e. etching the desired metal pattern in the metal layer using the photoresist as the mask; f. removing the remaining photoresist layer; g. depositing a dielectric layer onto the metal and over the substrate; h. micromachining the dielectric layer to the level of the metal to provide the desired pattern of dielectric material between the metal of the metallic pattern; wherein said micromachining is single crystal diamond to provide planar metallic pattern in which the flatness is within 1 micron over 1 metal length and the average roughness of the metallic pattern is 0.02 to 0.005 micron.
2. The process of claim 1 wherein said dielectric layer is a polyimide precursor layer.
3. The process of claim 1 wherein the metal includes copper.
4. The process of claim 1 wherein said desired thickness of said metal is about 2 microns to about 40 microns.
5. The process of claim 1 wherein said desired thickness of said metal is about 5 microns.Cited by (0)
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References (0)
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