Photosensitive resin composition for forming a polyimide film pattern

Abstract

Disclosed is a photosensitive resin composition for forming a polyimide film pattern. The composition contains a polyamic acid and at least one silyl ketone compound represented by general formula (II) given below, ##STR1## where each of R 3 to R 16 is a are substituted or unsubstituted alkyl group having 1 to 12 carbon atoms or a substituted or unsubstituted aromatic group having 6 to 14 carbon atoms, each of R 5 to R 16 may be a substituted or unsubstituted silyl group, and each of l, m, n, s, t and u is 0 or 1, at least one of l, m, n, s, t and u being 1. The composition further contains a sensitizer, as required. A semiconductor substrate is coated with the composition, followed by exposing the coating through a predetermined mask and subsequently developing and heat-treating the coating so as to form a polyimide film pattern.

What is claimed is: 
     
       1. A photosensitive resin composition for forming a polyimide film pattern, comprising: a polyamic acid having a repeating unit represented by general formula (I) and at least one silyl ketone compound represented by general formula (II): ##STR46##  where, R 1  is substituted or unsubstituted ##STR47##  R 2  is a divalent organic rinking group; each of R 3  and R 4  is a substituted or unsubstituted alkyl group having 1 to 12 carbon atoms or a substituted or unsubstituted aromatic group having 6 to 14 carbon atoms; each of R 5  to R 16  is a substituted or unsubstituted alkyl group having 1 to 12 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 14 carbon atoms, or a substituted or unsubstituted silyl group; and each of l, m, n, s, t and u is 0 or 1, at least one of l, m, n, s, t and u being 1.   
     
     
       2. The photosensitive resin composition for forming a polyimide film pattern according to claim 1, wherein the polyamic acid having a repeating unit represented by formula (I) is a polymer synthesized by a polycondensation reaction among a monoamine represented by general formula (III), a tetracarboxylic dianhydride represented by general formula (V), and a diamine represented by general formula (VI): ##STR48## where, R 1  is a substituted or unsubstituted ##STR49## R 2  is a divalent organic rinking group; and A is a monovalent organic group. 
     
     
       3. The photosensitive resin composition for forming a polyimide film pattern according to claim 2, wherein the tetracarboxylic dianhydride represented by general formula (V) is pyromellitic dianhydride and/or 3,3',4,4'-benzophenon tetracarboxylic dianhydride, and the diamine represented by general formula (VI) is an aromatic diamine and/or a siloxane compound. 
     
     
       4. The photosensitive resin composition for forming a polyimide film pattern according to claim 1, wherein the polyamic acid having a repeating unit represented by formula (I) is a polymer synthesized by a polycondensation reaction among a dicarboxylic anhydride represented by general formula (IV), a tetracarboxylic dianhydride represented by general formula (V), and a diamine represented by general formula (VI): ##STR50## where, R 1  is a substituted or unsubstituted ##STR51## R 2  is a divalent organic rinking group; and B is a divalent organic group. 
     
     
       5. The photosensitive resin composition for forming a polyimide film pattern according to claim 3, wherein the tetracarboxylic dianhydride represented by general formula (V) is pyromellitic dianhydride and/or 3,3',4,4'-benzophenon tetracarboxylic dianhydride, and the diamine represented by general formula (VI) is an aromatic diamine and/or a siloxane compound. 
     
     
       6. The photosensitive resin composition for forming a polyimide film pattern according to claim 1, wherein the polyamic acid having a repeating unit represented by formula (I) is a copolymer synthesized by a polycondensation reaction among maleic anhydride, pyromellitic dianhydride, 3,3',4,4'-benzophenon tetracarboxylic dianhydride, 4,4'-diamino diphenyl ether, and bis (γ-aminopropyl) tetramethyl disiloxane. 
     
     
       7. The photosensitive resin composition for forming a polyimide film pattern according to claim 1, wherein the silyl ketone compound represented by general formula (II) is at least one compound selected from the group consisting of (SK-2), (SK-4), (SK-5), (SK-6), (SK-11), and (SK-13) given below: ##STR52## 
     
     
       8. The photosensitive resin composition for forming a polyimide film pattern according to claim 1, wherein the silyl ketone compound represented by general formula (II) is used in an amount of 5 to 60 parts by weight based on 100 parts by weight of the polyamic acid. 
     
     
       9. A photosensitive resin composition for forming a polyimide film pattern, comprising: a polyamic acid having a repeating unit represented by general formula (I);   at least one kind of a silyl ketone compound represented by general formula (II); and   a sensitizer: ##STR53## where, R 1  is a substituted or unsubstituted ##STR54## R 2  is a divalent organic rinking group; each of R 3  and R 4  is a substituted or unsubstituted alkyl group having 1 to 12 carbon atoms or a substituted o unsubstituted aromatic group having 6 to 14 carbon atoms; each of R 5  to R 16  is a substituted or unsubstituted alkyl group having 1 to 12 carbon atoms, a substituted or unsubstituted aromatic group having 6 to 14 carbon atoms, or a substituted or unsubstituted silyl group; and each of l, m, n, s, t and u is 0 or 1, at least one of l, m, n, s, t and u being 1.   
     
     
       10. The photosensitive resin composition for forming a polyimide film pattern according to claim 9, wherein the polyamic acid having a repeating unit represented by formula (I) is a polymer synthesized by a polycondensation reaction among a monoamine represented by the general formula (III), a tetracarboxylic anhyride represented by the formula (V), and a diamine represented by general formula (VI): ##STR55## where, R 1  is a substituted or unsubstituted ##STR56## R 2  is a divalent organic rinking group; and A is a monovalent organic group. 
     
     
       11. The photosensitive resin composition for forming a polyimide film pattern according to claim 10, wherein the tetracarboxylic dianhydride represented by general formula (V) is pyromellitic dianhydride and/or 3,3',4,4'-benzophenon tetracarboxylic dianhydride, and the diamine represented by general formula is an aromatic diamine and/or a siloxane compound. 
     
     
       12. The photosensitive resin composition for forming a polyimide film pattern according to claim 9, wherein the polyamic acid having a repeating unit represented by formula (I) is a polymer synthesized by a polycondensation reaction among a dicarboxylic anhydride represented by general formula (IV), a tetracarboxylic dianhydride represented by general formula (V), and a diamine represented by general formula (VI): ##STR57## where, R 1  is a substituted or unsubstituted ##STR58## R 2  is a divalent organic radical; and B is a divalent organic group. 
     
     
       13. The photosensitive resin composition for forming a polyimide film pattern according to claim 12, wherein the tetracarboxylic dianhydride represented by general formula (V) is pyromellitic dianhydride and/or 3,3',4,4'-benzophenon tetracarboxylic dianhydride, and the diamine represented by general formula (VI) is an aromatic diamine and/or a siloxane compound. 
     
     
       14. The photosensitive resin composition for forming a polyimide film pattern according to claim 9, wherein the polyamic acid having a repeating unit represented by formula (I) is a copolymer synthesized by a polycondensation reaction among maleic anhydride, pyromellitic dianhydride, 3,3',4,4'-benzophenon tetracarboxylic dianhydride, 4,4'-diamino diphenyl ether, and bis (γ-aminopropyl) tetramethyl disiloxane. 
     
     
       15. The photosensitive resin composition for forming a polyimide film pattern according to claim 9, wherein the silyl ketone compound represented by general formula (II) is at least one compound selected from the group consisting of (SK-2), (SK-4), (SK-5), (SK 6), (SK-11), and (SK-13) given below: ##STR59## 
     
     
       16. The photosensitive resin composition for forming a polyimide film pattern according to claim 9, wherein the silyl ketone compound represented by general formula (II) is used in an amount of 5 to 60 parts by weight based on 100 parts by weight of the polyamic acid. 
     
     
       17. The photosensitive resin composition for forming a polyimide film pattern according to claim 9, wherein the sensitizer is at least one compound selected from the group consisting of benzophenone series compounds, thioxanthone series compounds and phenothiazine series compounds. 
     
     
       18. The photosensitive resin composition for forming a polyimide film pattern according to claim 9, wherein the sensitizer is at least one compound selected from the group consisting of (SE-7), (SE-12), (SE-13) and (SE-14) given below: ##STR60## 
     
     
       19. The photosensitive resin composition for forming a polyimide film pattern according to claim 9, wherein the sensitizer is used in an amount of 0.001 to 20% by weight based on the amount of the polyamic acid and the silyl ketone compound.