Compound semiconductor pellet, and method for dicing compound semiconductor wafer

Abstract

A compound semiconductor pellet has a zincblende crystal structure and is formed of a III-V compound semiconductor, such as GaAs. The major surface of the pellet and side surfaces thereof are both {100} planes. To obtain this type of pellet, [010] and [001] directions are selected as dicing directions. In the case of a crystal having a zincblende crystal structure, a direction which forms 45° with reference to a cleavage plane of the crystal is selected as a dicing direction.

What is claimed is: 
     
       1. A method for dicing a compound semiconductor wafer, comprising the steps of: a) providing a single-crystal III-V compound semiconductor wafer having first dicing lines positioned a distance apart in a [001] direction, second dicing lines positioned a distance apart in a [010] direction, and an orientation flat with a {100} exposed surface;   b) dicing said semiconductor wafer along said first dicing lines in the [001] direction by use of a blade dicer; and   c) dicing said compound semiconductor wafer along said second dicing lines in the [010] direction by use of a blade dicer.   
     
     
       2. The method according to claim 11, wherein said single-crystal III-V compound semiconductor wafer is GaAs.