Metal oxide dielectric dense bodies, precursor powders therefor, and methods for preparing same

Abstract

A metal oxide dielectric dense body, comprising (I) grains having a predominant crystalline phase (a) a primary metal oxide selected from the group consisting of silicon and magnesium oxide and (b) optionally a secondary metal oxide selected from the group consisting of aluminum and zinc oxide and (II) between about 1 and about 20 atom % bismuth, vanadium, or boron oxide or combination thereof, discontinuously located at the boundaries of the crystalline grains or as inclusions in the crystalline grains, the atom %'s based on the total atoms of bismuth, vanadium, boron, silicon, magnesium, aluminum, and zinc. The dense body has a density which is at least 95% of theoretical.

What is claimed is: 
     
       1. A multilayer substrate for a semiconductor device, at least two layers thereof having thereon a conductor pattern and being electrically connected to each other by metallized vias, the substrate being made of a metal oxide dielectric dense body consisting essentially of (I) crystalline grains having a predominant crystalline phase selected from the group consisting of cordierite, magnesium oxide, mullite, mullite-silica, willemite, and silica, and   (II) between about 1 and about 20 atom % bismuth as bismuth oxide, discontinuously located at the boundaries of the crystalline grains or as inclusions in the crystalline grains, the atom %'s based on the total atoms of bismuth in the bismuth oxide and silicon, magnesium, aluminum, and zinc in the cordierite, magnesium oxide, mullite, mullite-silica, willemite, or silica; the dense body having a density which is at least 95% of theoretical.     
     
     
       2. A multilayer substrate according to claim 1, wherein the metal oxide dielectric dense has a density which is at least 98% of theoretical. 
     
     
       3. A multilayer substrate according to claim 1 or 2, wherein the predominant crystalline phase of the grains in the metal oxide dielectric dense body is cordierite having a magnesium oxide/aluminum oxide/silica molar ratio of 2/1.0-3.0/4.0-6.0. 
     
     
       4. A multilayer substrate according to claim 3, wherein the molar ratio is 2/1.8-2.8/4.8-5.2 and the amount of bismuth is between about 2 and about 20 atom %. 
     
     
       5. A multilayer substrate according to claim 1 or 2, wherein the predominant crystalline phase of the grains in the metal oxide dielectric dense body is magnesium oxide and the amount of bismuth is between about 2 and about 20 atom %. 
     
     
       6. A multilayer substrate according to claim 1 or 2, wherein the predominant crystalline phase of the grains in the metal oxide dielectric dense body is mullite having an aluminum oxide/silica molar ratio of 3/1.0-3.0 and the amount of bismuth is between about 5 and about 20 atom %. 
     
     
       7. A multilayer substrate according to claim 6, wherein the molar ratio is 3/1.8-2.2. 
     
     
       8. A multilayer substrate according to claim 1 or 2, wherein the predominant crystalline phase of the grains in the metal oxide dielectric dense body is mullite-silica having an aluminum oxide/silica molar ratio of 3/1.0-3.0 in the mullite and mullite-silica molar ratio of 1:3-5. 
     
     
       9. A mutilayer substrate according to claim 8, wherein the aluminum oxide/silica molar ratio in the mullite is 3/1.8-2.2, the mullite/silica molar ratio is 1/3.5-4.5, and the amount of bismuth is between about 2 and about 20 atom %. 
     
     
       10. A multilayer substrate according to claim 1 or 2, wherein the predominant crystalline phase of the grains in the metal oxide dielectric dense body is willemite having a zinc oxide/silica molar ratio of 2/0.5-1.5. 
     
     
       11. A multilayer substrate according to claim 10, wherein the molar ratio is 2/0.8-1.2 and the amount of bismuth is between about 2 and about 20 atom %. 
     
     
       12. A multilayer substrate according to claim 1 or 2, wherein the predominant crystalline phase of the grains in the metal oxide dielectric dense body is silica.