Active-matrix display device

Abstract

An active-matrix display device comprising a plurality of picture elements that are arranged into a matrix and thin-film transistors that switch the picture elements, wherein an MIS-structured diode and each of the picture elements are connected with each of the thin-film transistors in parallel.

What is claimed is: 
     
       1. An active-matrix display device comprising a plurality of picture elements that are arranged into a matrix, thin-film transistors that switch said picture elements, and MIS-structured diodes that correspond to the respective picture elements,   wherein each of said MIS-structured diodes is connected in parallel with the associated picture element, and each parallel arrangement of one of said diodes and said associated picture element is connected in series with an associated transistor, said MIS-structured diodes being constructed so that the capacitance of the MIS-diode becomes asymmetric according to the direction of a bias voltage to compensate for a asymmetric voltage to be applied to each picture element.   
     
     
       2. An active-matrix display device according to claim 1, wherein said thin-film transistors are amorphous silicon thin-film transistors. 
     
     
       3. An active-matrix display device according to claim 1, wherein each of said thin-film transistors has a gate insulating film, said gate insulating film being formed by a two-layered film of tantalum oxide and silicon nitride. 
     
     
       4. An active-matrix display device according to claim 1, wherein each of said MIS-structured diodes has an insulating film, said insulating film being formed by a two-layered film of tantalum oxide and silicon nitride. 
     
     
       5. An active-matrix display device according to claim 1, wherein each of said thin-film transistors has a gate insulating film, said gate insulating film being formed by a two-layered film of tantalum oxide and silicon oxide. 
     
     
       6. An active-matrix display device according to claim 1, wherein each of said MIS-structured diodes has an insulating film, said insulating film being formed by a two-layered film of tantalum oxide and silicon oxide.