Process for producing an amorphous photoelectric transducer

Abstract

An amorphous photoelectric transducer of the type that converts light energy to electric energy using a p-n or p-i-n junction in an amorphous semiconductor having a p-type film on the light entrance side is disclosed. The p-type amorphous semiconductor film is formed with gaseous boron trifluoride (BF3) as a dopant, the film containing boron atoms at a concentration in the range of 1x1020-2x1021 atoms/cm3, and the concentration of fluorine atoms in the film being no more than one half of the concentration of boron atoms. A process for producing an amorphous photo-electric transducer is also disclosed, wherein the p-type amorphous semiconductor film is formed by a pulse discharge-assisted chemical vapor deposition (CVD) technique which decomposes a feed gas including gaseous boron trifluoride (BF3) as a dopant.

What is claimed is: 
     
       1. In a process for producing an amorphous photoelectric transducer which converts light energy to electric energy using a p-n or p-i-n junction in an amorphous semiconductor having a p-type film on the light entrance side, the improvement wherein the p-type amorphous semiconductor film is formed by a pulse discharge-assisted chemical vapor deposition technique which decomposes a feed gas by discharging, said feed gas containing gaseous boron trifluoride dopant. 
     
     
       2. A process according to claim 1 wherein said feed gas contains monosilane and methane gases as main components. 
     
     
       3. A process according to claim 1 wherein said p-type amorphous semiconductor film is comprised of amorphous silicon carbide. 
     
     
       4. A process according to claim 1 wherein said p-type amorphous semiconductor film contains a concentration of boron atoms in the range of 1×10 20  -2×10 21  atoms/cm 3 , and a concentration of fluorine atoms not more than 1/2 of said concentration of boron atoms. 
     
     
       5. A process according to claim 4 wherein said concentration of fluorine atoms is not more than 1/10 of said concentration of boron atoms.