Silicon carbide semiconductor device

Abstract

A silicon carbide semiconductor device is provided which includes at least one heterojunction composed of two different polytypes of silicon carbide. The two polytypes of silicon carbide in the heterojunction include a β-type silicon carbide layer having an α-type silicon carbide layer disposed thereon.

What is claimed is: 
     
       1. A silicon carbide semiconductor device comprising at least one α/βheterojunction, wherein the device comprises a light-emitting diode including: an n-type conductivity β-type silicon carbide semiconductor substrate,   a first p-type conductivity β-type silicon carbide semiconductor layer grown on said n-type conductivity β-type silicon carbide semiconductor substrate,   a second p-type conductivity α-type silicon carbide semiconductor layer grown on said p-type conductivity B-type silicon carbide semiconductor layer formed on said n-type conductivity β-type silicon carbide semiconductor substrate,   an n-sided ohmic electrode disposed on a back face of said n-type conductivity β-type silicon carbide semiconductor substrate opposite to the face of said n-type conductivity β-type silicon carbide semiconductor substrate having said first p-type conductivity β-type silicon carbide semiconductor layer grown thereon, and   a p-sided ohmic electrode disposed on the upper face of said second p-type conductivity α-type silicon carbide semiconductor layer.   
     
     
       2. A silicon carbide semiconductor device comprising at least one α/βheterojunction, wherein the device comprises a bipolar transistor including: an n-type conductivity β-type silicon carbide collector layer,   a p-type conductivity β-type silicon carbide base layer grown on said n-type conductivity β-type silicon carbide collector layer,   an n-type conductivity α-type silicon carbide emitter layer grown on said p-type conductivity β-type silicon carbide base layer,   a collector electrode disposed on a back face of said n-type conductivity β-type silicon carbide collector layer opposite to the face of said n-type conductivity β-type silicon carbide collector layer having said p-type conductivity β-type silicon carbide base layer grown thereon, and   an emitter electrode disposed on the upper face of said n-type conductivity α-type silicon carbide emitter layer.