Method of manufacturing semiconductor devices

Abstract

A resistor (45) of semiconductor material is formed on an insulating layer (42), then a silicon nitride film (46) is deposited on the entire surface including the resistor (45), and a silicon dioxide film (47) is sequentially deposited thereon, and thereafter electrodes (49A) and (49B)of the resistor (45) are formed, thereby preventing the fragility of the insulating layer (51) at step portions of the resistor (45), preventing the breakage of the electrodes and interconnections, and improving a withstand voltage between the resistor (45) and the interconnections crossing over it to thereby improve yield of a semiconductor device. An impurity (64) is introduced into a semiconductor film (63) to be a resistor by the ion implantation technique to thereby change the state of the film into an amorphous state, semiconductor film (63a) is heated in atmosphere including hydrogen compound gas and/or hydrogen gas, and then heated to activate it to thereby form a resistor (67), so that a resistance value of the resistor (67) at a region where the impurity is highly dosed can be decreased progressively.

We claim: 
     
       1. A method of manufacturing a semiconductor device, comprising the steps of: ion-implanting an impurity into a semiconductor film to be a resistor to change said semiconductor film from polycrystalline to amorphous;   patterning said implanted semiconductor film to form the shape of a resistor;   first heat-treating said patterned semiconductor film in atmosphere including hydrogen gas and ammonia gas at a temperature of 500° to 800° C.; and   thereafter second heat-treating said heat-treated semiconductor film to activate said semiconductor film, thereby forming said resistor.