Process for fabricating an electronic circuit apparatus

Abstract

An electronic circuit apparatus which is constructed by laminating a plurality of thin films onto an insulative substrate. On the substrate, an electronic circuit element having two conductive layer which are laminated through an insulative layer is formed. The insulative layer is formed so as to cover the whole surface of the insulative substrate.

What is claimed is: 
     
       1. A process for fabricating an electronic circuit apparatus comprising: a substrate having an insulating surface, a plurality of electronic circuit elements disposed on said substrate, each of said electronic circuit elements having a thin film transistor provided with a gate electrode, a gate insulating layer, a semiconductor active layer, a source electrode and a drain electrode, each of said electronic circuit elements further having a capacitor, wherein said capacitor and said thin film transistor of each circuit element have a common semiconductor layer;   a wiring unit electrically connected with respective electronic circuit elements and disposed on said substrate, said wiring unit having a plurality of lower wirings, an insulating layer, a semiconductor layer and a plurality of upper wirings; and   a protective layer covering said plurality of electronic circuit elements and said wiring unit;   said process comprising the steps of:   forming said gate electrodes and said plurality of lower wirings on said substrate;   applying an insulating film with a first thickness over said gate electrodes and said plurality of lower wirings, said gate insulating layers and said insulating layer being made of said insulating film;   applying a semiconductor film on said insulating film, said semiconductor active layers and said semiconductor layer being made of said semiconductor film;   forming said source electrodes, said drain electrodes and said plurality of upper wirings, whereby said plurality of electronic circuit elements and said wiring unit are formed on said substrate;   isolating said electronic circuit elements, respectively, by means of a plasma etching, by removing a part of said semiconductor film and a part of said insulating film between adjacent electronic circuit elements, wherein a remaining part of said insulating film between adjacent electronic circuit elements remains, and the remaining part of said insulating film has a second thickness less than the first thickness; and   applying said protective layer over said electronic circuit elements and said wiring unit, whereby said protective layer is in contact with the surface of said insulating film between adjacent electronic circuit elements and at an outer side of said plurality of electronic circuit elements.   
     
     
       2. A process according to claim 1, wherein said electronic circuit element is a photoelectric conversion element. 
     
     
       3. A process according to claim 1 wherein said insulating film is made of silicon nitride. 
     
     
       4. A process according to claim 1, wherein said semiconductor film is made of amorphous silicon.