Process for formation of heteroepitaxy

Abstract

A process of the formation of heteroepitaxy including heating a silicon substrate in gas ambience including one of a hydride of a IIIB group element and an organic substance of a IIIB group element, having the IIIB group element remain on the surface of the silicon substrate, and growing a GaAs film on a surface of the silicon substrate after the heat processing. Particles remaining on an inner wall or the like of a film forming apparatus are prevented from reaching the surface, and a IIIB group element remains on the surface after preprocessing. Such a GaAs film formed on the surface includes less unevenness and crystal defects.

What is claimed is: 
     
       1. A process of the formation of heteroepitaxy comprising the steps of: heating a silicon substrate in a IIIB group element gas including one of trimethylgallium (TMG) gas and triethylgallium (TEG) gas with a higher temperature than a depositing temperature of a single crystal GaAs layer and having the IIIB group element remain on a surface of the silicon substrate;   forming a GaAs initial layer on the silicon substrate while heating the silicon substrate with a lower temperature than the depositing temperature; and   forming a single crystal GaAs layer on the silicon substrate while heating the silicon substrate with the depositing temperature.   
     
     
       2. A process of the formation of heteroepitaxy according to claim 1, wherein said heating step includes the step of providing the higher temperature between 750° C. and 875° C. 
     
     
       3. A process of the formation of heteroepitaxy comprising the steps of: heating a silicon substrate in a IIIB group element including diborane (B 2  H 6 ) with a higher temperature than a depositing temperature of a single crystal GaAs layer and having the IIIB group element remain on a surface of the silicon substrate;   forming a GaAs initial layer on the silicon substrate while heating the silicon substrate with a lower temperature than the depositing temperature; and   forming a single crystal GaAs layer on the silicon substrate while heating the silicon substrate with the depositing temperature.   
     
     
       4. A process of the formation of heteroepitaxy according to claim 3, wherein said heating step includes the step of providing the higher temperature between 850° C. and 1200° C. 
     
     
       5. A process of the formation of heteroepitaxy according to claim 1, further including the step of performing all of said steps in a same film forming apparatus. 
     
     
       6. A process of the formation of heteroepitaxy according to claim 1, further including the step of providing said silicon substrate at a (100) plane being 1° to 4° off toward <011>. 
     
     
       7. A process of the formation of heteroepitaxy according to claim 1, further including the step of forming said GaAs film by one of metal organic chemical vapor deposition, molecular beam epitaxy and atomic layer epitaxy.