Method for growing crystals of N-type II-VI compound semiconductors

Abstract

A method which permits the growth of high-quality crystals of n-type II-VI compound semiconductors containing sulfur, by suppressing the reaction of a group III or VII element as a dopant with a group II material at low temperature. A raw material gas containing an organometallic material of the group III or organic material of the group VII is premixed with a raw material gas containing organic sulfur material, then the premixture is mixed with a raw material gas containing an organometallic material of the group II, and the mixture is used to grow a crystal of an n-type II-VI compound semiconductor on a semiconductor substrate by a metal organic vapor phase epitaxial growth method.

What we claim is: 
     
       1. A method for growing a crystal of an n-type II-VI compound semiconductor, comprising: premixing a first raw material gas containing an organometallic material of the group III or organic material of the group VII with a second raw material gas containing an organic sulfur material to produce a premixture, mixing the premixture with a third raw material gas containing an organometallic material of the group II to produce a mixture, and growing said crystal of said n-type II-VI compound semiconductor on a semiconductor substrate by a metal organic vapor phase epitaxial growth method using the mixture, and   said organic sulfur material being tertiary butyl mercaptan.   
     
     
       2. A method for growing a crystal of an n-type II-VI compound semiconductor according to claim 1, in which said organometallic material of the group III is triethylindium, trimethylindium, ethyl dimethylindium, triethyl gallium, or trimethyl gallium. 
     
     
       3. A method for growing a crystal n-type II-VI compound semiconductor according to claim 1, in which said II-VI compound semiconductor is cadmium zinc sulfo selenide (Cd x  Zn 1-x  S y  Se 1-y , where 0≦x≦1 and 0<y≦1). 
     
     
       4. A method for growing a crystal of an n-type II-VI compound semiconductor, comprising: premixing a first raw material gas containing an organometallic material of the group III or organic material of the group VII with a second raw material gas containing an organic sulfur material to produce a premixture, mixing the premixture with a third raw material gas containing an organometallic material of the group II to produce a mixture, and growing said crystal of said n-type II-VI compound semiconductor on a semiconductor substrate by a metal organic vapor phase epitaxial growth method using the mixture, and   said organic material of the group VII is ethyliodide, hexane iodide, or butylbromide.   
     
     
       5. A method for growing a crystal of an n-type II-VI compound semiconductor according to claim 4, in which said organometallic material of the group III is triethylindium, trimethylindium, ethyl dimethylindium, triethyl gallium, or trimethyl gallium. 
     
     
       6. A method for growing a crystal n-type II-VI compound semiconductor according to claim 4, in which said II-VI compound semiconductor is cadmium zinc sulfo selenide (Cd x  Zn 1-x  S y  Se 1-y , where 0≦x≦1 and 0<y≦1). 
     
     
       7. A method for growing a crystal of an n-type II-VI compound semiconductor, comprising: premixing a first raw material gas containing an organometallic material of the group III or organic material of the group VII with a second raw material gas containing an organic sulfur material to produce a premixture, mixing the premixture with a third raw material gas containing an organometallic material of the group II to produce a mixture, and growing said crystal of said n-type II-VI compound semiconductor on a semiconductor substrate by a metal organic vapor phase epitaxial growth method using the mixture,   said organic sulfur material being tertiary butyl mercaptan, and   said organic material of the group VII being ethyliodide, hexane iodide, or butylbromide.   
     
     
       8. A method for growing a crystal of an n-type II-VI compound semiconductor according to claim 7, in which said organometallic material of the group III is triethylindium, trimethylindium, ethyl dimethylindium, triethyl gallium, or trimethyl gallium. 
     
     
       9. A method for growing a crystal n-type II-VI compound semiconductor according to claim 7, in which said II-VI compound semiconductor is cadmium zinc sulfo selenide (Cd x  Zn 1-x  S y  Se 1-y , where 0≦x≦1 and 0<y≦1). 
     
     
       10. A method for growing a crystal of an n-type II-VI compound semi-conductor, comprising: premixing a first raw material gas containing an organometallic material of the group III or organic material of the group VII with a second raw material gas containing an organic sulfur material to produce a premixture;   mixing the premixture with a third raw material gas containing an organometallic material of the group II to produce a mixture; and   growing said crystal of said n-type II-VI compound semiconductor on a semiconductor substrate by a metal organic vapor phase epitaxial growth method using the mixture.   
     
     
       11. A method for growing a crystal of an n-type II-VI compound semiconductor according to claim 10, in which said organometallic material of the group III is triethylindium, trimethylindium, ethyl dimethylindium, triethyl gallium, or trimethyl gallium. 
     
     
       12. A method for growing a crystal of an n-type II-VI compound semiconductor according to claim 10, in which said II-VI compound semiconductor is cadmium zinc sulfo selenide (Cd x  Z 1-x  S y  Se 1-y , where 0≦x≦1 and 0≦y≦1).