US5449880AExpiredUtility

Process and apparatus for forming a deposited film using microwave-plasma CVD

58
Assignee: CANON KKPriority: Jul 21, 1992Filed: Jul 20, 1993Granted: Sep 12, 1995
Est. expiryJul 21, 2012(expired)· nominal 20-yr term from priority
Inventors:Satoshi Takaki
H01J 37/3222C23C 16/511H01J 37/32229H01J 37/32192
58
PatentIndex Score
13
Cited by
9
References
16
Claims

Abstract

A process for forming a deposited film on a substrate by microwave plasma CVD comprises holding a substrate in a pressure-reducible reactor vessel, introducing microwave energy into the reactor vessel from at least three microwave-introducing means attached thereto for introducing the microwave energy into the reactor vessel while introducing a raw material gas into the reactor vessel, and forming plasma in the reactor vessel by the microwave energy, thereby forming a deposited film on the surface of the substrate.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A process for forming a deposited film on a substrate by microwave plasma CVD, which comprises: holding a substrate in a pressure-reducible reactor vessel,   introducing microwave energy into the reactor vessel from a pair of counterposed microwave-introducing means attached thereto for introducing the microwave energy into the reactor vessel while introducing a raw material gas into the reactor vessel,   introducing microwave energy from at least one microwave introducing means other than said pair of counterposed microwave-introducing means into the microwave introduction space formed by said pair of counterposed microwave introducing means, and   forming plasma in the reactor vessel by the microwave energy, thereby forming a deposited film on the surface of the substrate.   
     
     
       2. A process according to claim 1, wherein a microwave transmission circuit formed by at least one of the microwave introducing means other than said pair of counterposed microwave-introducing means provided at a position not in direct contact with a discharge space is a microwave antenna. 
     
     
       3. A process according to claim 1, wherein the substrate is in a cylindrical form. 
     
     
       4. The process according to claim 1, wherein the at least one other microwave-introducing means is provided so as to be in opposition to a discharge space via a member. 
     
     
       5. The process according to claim 4, wherein the member is the substrate. 
     
     
       6. The process according to claim 2, wherein the microwave antenna is a Lisitano coil. 
     
     
       7. The process according to claim 2, wherein the microwave antenna is a slot antenna. 
     
     
       8. The process according to claim 1, wherein the microwave energy is introduced from a microwave introducing window of the pair of counterposed microwave introducing means. 
     
     
       9. An apparatus for forming a deposited film on a substrate held in a reactor vessel by microwave plasma CVD, which comprises: a pressure-reducible reactor vessel,   a means for introducing a raw material gas into the reactor vessel,   a means for evacuating the reactor vessel, and   a means for introducing microwave energy into the reactor vessel, attached to the reactor vessel,   wherein the means for introducing microwave energy comprises a pair of counterposed microwave introducing means and at least one microwave-introducing means other than said pair of counterposed microwave introducing means for introducing microwave energy into a microwave introduction space formed by said pair of counterposed microwave introducing means.   
     
     
       10. An apparatus according to claim 9, wherein a microwave transmission circuit formed by at least one of the microwave-introducing means provided at a position not in direct contact with a discharge space is a microwave antenna. 
     
     
       11. An apparatus according to claim 9, wherein the substrate is in a cylindrical form. 
     
     
       12. The apparatus according to claim 9, wherein the at least one other microwave-introducing means is provided so as to be in opposition to a discharge space via a member. 
     
     
       13. The apparatus according to claim 12, wherein the member is the substrate. 
     
     
       14. The apparatus according to claim 10, wherein the microwave antenna is a Lisitano coil. 
     
     
       15. The apparatus according to claim 10, wherein the microwave antenna is a slot antenna. 
     
     
       16. The apparatus according to claim 9, wherein the pair of the counterposed microwave-introducing means each has a microwave-introducing means each has a microwave-introducing window.

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