Method for manufacturing a semiconductor light emitting device

Abstract

An AlGaAs chip which has an n-type layer and a p-type layer is immersed in an aqueous solution containing 0.2-0.6 wt. % of ammonia and 25-35 wt. % of hydrogen peroxide to form a primary protective layer, and after drying the AlGaAs chip, the AlGaAs chip is for a second time immersed in an aqueous solution containing 0.2-0.6 wt. % of ammonia and 25-35 wt. % of hydrogen peroxide to form a secondary protective layer.

We claim: 
     
       1. A method of manufacturing a light emitting device characterized by the fact that an AlGaAs chip which has an n-type layer(s) and a p-type layer(s) is treated with the following processes to form a protective layer primarily composed of aluminum oxide on the top surface and the side surfaces of said AlGaAs chip, comprising: (a) a process in which said AlGaAs chip which has said n-type layer(s) and said p-type layer(s) is immersed in an ammonia-hydrogen peroxide aqueous solution containing 0.2-0.6 wt. % of ammonia and 25-35 wt. % of hydrogen peroxide,   (b) a process in which, after said process (a), said AlGaAs chip is dried, and   (c) a process in which, after said process (b), said AlGaAs chip is immersed for a second time in an ammonia-hydrogen peroxide aqueous solution containing 0.2-0.6 wt. % of ammonia and 25-35 wt. % of hydrogen peroxide.   
     
     
       2. A method of manufacturing a light emitting device as described in claim 1 wherein: a lower surface of said AlGaAs chip which is to be fixed to a base is adhered to an adhesive sheet, and said processes (a) and (b) are carried out with this configuration; and   the surface of said AlGaAs chip which is adhered to an adhesive sheet is altered from the lower surface to the upper surface on the light extracting side of said AlGaAs chip, and said process (c) is carried out with said upper surface of said AlGaAs chip adhered to an adhesive sheet.   
     
     
       3. A method of manufacturing a light emitting device as described in claim 1 characterized by the fact that a protective layer primarily composed of aluminum oxide is formed with a thickness of 100 nm or more.