US5464713AExpiredUtility

Phase shift mask and method for repairing a defect of a phase shift mask

68
Assignee: MITSUBISHI ELECTRIC CORPPriority: Sep 24, 1993Filed: Sep 21, 1994Granted: Nov 7, 1995
Est. expirySep 24, 2013(expired)· nominal 20-yr term from priority
G03F 1/72G03F 1/32G03F 1/26
68
PatentIndex Score
20
Cited by
6
References
15
Claims

Abstract

In a phase shift mask and a method for repairing a defect of a phase shift mask according to the present invention, a phase shifter defective portion in which a portion of a phase shifter portion is missing is formed in a region including a boundary between a light transmitting portion and a phase shifter portion, and phase shifter defective portion is supplemented with a repairing member having substantially the same transmittance as that of phase shifter portion and capable of converting a phase of exposure light by 180°. Thus, a defect of the phase shifter portion generated on or in the vicinity of the boundary between the light transmitting portion and the phase shifter portion can be repaired without impairing a function as a phase shift mask.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A phase shift mask, comprising: a light transmitting portion exposing a surface of a transparent substrate; and   a phase shifter portion formed on said transparent substrate, having a smaller transmittance of exposure light than that of said light transmitting portion and converting a phase of exposure light by 180°,   wherein a phase shifter defective portion in which a portion of said phase shifter portion is missing is provided in a region including a boundary between said light transmitting portion and said phase shifter portion, and   a repairing member having substantially the same transmittance and phase angle as those of said phase shifter portion is provided in said phase shifter defective portion.   
     
     
       2. The phase shift mask according to claim 1, wherein a phase angle of said repairing member is 120°-240°. 
     
     
       3. The phase shift mask according to claim 1, wherein a transmittance of said repairing member is 4%-15%. 
     
     
       4. The phase shift mask according to claim 1, wherein said repairing member is made of the same material as that of said phase shifter portion. 
     
     
       5. The phase shift mask according to claim 1, wherein said repairing member is made of a kind of material selected from the group consisting of a metal oxide, a metal nitride oxide, a metal silicide oxide, and a nitride oxide of metal silicide. 
     
     
       6. The phase shift mask according to claim 1, wherein said repairing member is made of a kind of material selected from the group comprising a carbon, a chromium oxide, a chromium nitride oxide, a chromium nitride carbide oxide, a molybdenum silicide oxide, and a nitride oxide of molybdenum silicide. 
     
     
       7. The phase shift mask according to claim 1, wherein said repairing member includes a first repairing film having substantially the same transmittance as that of said phase shifter portion and a second repairing film having substantially the same phase angle as that of said phase shifter portion. 
     
     
       8. A phase shift mask, comprising: a light transmitting portion exposing a surface of a transparent substrate; and   a phase shifter portion formed on said transparent substrate, having a smaller transmittance of exposure light than that of said light transmitting portion, and converting a phase of exposure light by 180°,   wherein a phase shifter defective portion in which a portion of said phase shifter portion is missing is provided in a region including a boundary between said light transmitting portion and said phase shifter portion, and   a light shielding film is provided at said phase shifter defective portion and at a region protruding to said light transmitting portion for a predetermined length from a boundary between said light transmitting portion and said phase shifter portion included in said phase shifter defective portion.   
     
     
       9. A method for repairing a defect of a phase shift mask including a light transmitting portion exposing a surface of a transparent substrate, and a phase shifter portion formed on said transparent substrate, having a smaller transmittance of exposure light than that of said light transmitting portion, and converting a phase of exposure light by 180°, comprising the steps of: detecting a phase shifter defective portion in which a portion of said phase shifter portion is missing in a region including a boundary between said light transmitting portion and said phase shifter portion; and   supplementing said phase shifter defective portion with a repairing member having substantially the same transmittance and phase angle as those of said phase shifter defective portion.   
     
     
       10. The method for repairing a defect of a phase shift mask according to claim 9, wherein a phase angle of said repairing member is 120°-240°. 
     
     
       11. The method for repairing a defect of a phase shift mask according to claim 9, wherein said repairing member has a transmittance of 4%-15%. 
     
     
       12. The method for repairing a defect of a phase shift mask according to claim 9, wherein said repairing member is supplemented to said phase shifter defective portion after repairing a defective shape of said phase shifter defective portion into a predetermined shape. 
     
     
       13. The method for repairing a defect of a phase shift mask according to claim 9, wherein said step of supplementing of said repairing member includes forming a first repairing film having substantially the same transmittance as that of said phase shifter portion, and forming a second repairing film having substantially the same phase angle as that of said phase shifter portion by a focused ion beam method. 
     
     
       14. A method for repairing a defect of a phase shift mask including a light transmitting portion exposing a surface of a transparent substrate, and a phase shifter portion formed on said transparent substrate, having a smaller transmittance of exposure light than that of said light transmitting portion, and converting a phase of exposure light by 180°, comprising the steps of: detecting a phase shifter defective portion in which a portion of said phase shifter portion is missing in a region including a boundary between said light transmitting portion and said phase shifter portion; and   forming a light shielding film at said phase shifter defective portion and at a region protruding to said light transmitting portion for a predetermined length from a boundary between said light transmitting portion and said phase shifter portion included in said phase shifter defective portion.   
     
     
       15. A method for repairing a defect of a phase shift mask, comprising the steps of: forming on a transparent substrate a phase shift pattern including a light transmitting portion exposing a surface of said transparent substrate, and a phase shifter portion having a smaller transmittance of exposure light than that of said light transmitting portion and converting a phase of exposure light by 180°;   forming a resist film on the entire surface of said phase shift pattern;   removing said resist film formed on and in the vicinity of a region including a boundary between said light transmitting portion and said phase shifter portion in a phase shifter defective portion in which a portion of said phase shifter portion is missing;   forming on said phase shift pattern a repairing film having substantially the same transmittance and phase angle as those of said phase shifter portion; and   removing said resist film by etching for leaving said repairing film in a region of said phase shifter defective portion.

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