Method of continuously forming a large area functional deposited film by microwave PCVD

Abstract

A method for forming a large area functional deposited film by a microwave PCVD method by continuously moving an elongated member in its lengthwise direction, and forming a columnar film-forming chamber the side wall of which is an intermediate portion of the moving elongated member. A deposited film forming raw material gas is introduced into the film-forming space via a gas supply device. Microwave plasma in the film-forming space is generated by radiating microwave energy from a microwave applicator while continuously, at the same time as that of the introduction of the raw material gas, moving a movable sheet made of a dielectric material which is positioned in contact with a microwave introduction opening and the surface of the microwave introduction opening. A deposited film can then be formed on the surface of the elongated member which constitutes the side wall and which is being continuously moved, the side wall constituted by the elongated member being exposed to the microwave plasma.

What is claimed is: 
     
       1. A method of continuously forming a functional deposited film by a microwave plasma CVD method comprising the steps of simultaneously: (i) providing a columnar film-forming chamber having opposed end walls and a cylindrical side wall, said cylindrical side wall being an intermediate portion of a continuously moving elongated member;   (ii) introducing a deposited film-forming raw material gas into said film forming chamber via gas supply means; and   (iii) generating a microwave plasma in said film-forming chamber through a continuously moving sheet made of dielectric material positioned in contact with a surface of a microwave introduction opening to said film-forming chamber wherein the microwave is introduced through said continuously moving sheet and conveyed to the continuously moving elongated member constituting the side wall of said film forming chamber and generates microwave plasma; and   thereafter depositing the film from said raw material gas on the surface of said elongated member constituting said side wall of said columnar film-forming chamber by exposing said side wall to said microwave plasma.   
     
     
       2. A method of continuously forming a functional deposited film by a microwave plasma CVD method according to claim 1, wherein said sheet is a dielectric material from 0.1 mm to 1.3 mm thick. 
     
     
       3. A method a continuously forming a functional deposited film by a microwave plasma CVD method according to claim 1, wherein the distance from said sheet to said microwave introduction opening is no more than 0.5 mm. 
     
     
       4. A method of continuously forming a functional deposited film by a microwave plasma CVD method according to claim 1, wherein said sheet is polished. 
     
     
       5. A method of continuously forming a functional deposited film by a microwave plasma CVD method according to claim 1, wherein said deposited film formed on said sheet has a thickness of 25 μm or less. 
     
     
       6. A method of continuously forming a functional deposited film by a microwave plasma CVD method according to claim 1, wherein said moving elongated member is curved at an intermediate portion by using a curving initial end forming means and a curving completion end forming means to form said side wall of said film-forming chamber. 
     
     
       7. A method of continuously forming a functional deposited film by a microwave plasma CVD method according to claim 1, wherein a microwave energy is radiated into said film-forming chamber via at least one microwave applicator means disposed in at least one end surface of said columnar film-forming chamber. 
     
     
       8. A method of continuously forming a functional deposited film by a microwave plasma CVD method according to claim 7, wherein said microwave applicator means is vertically disposed with respect to said end surface so as to radiate said microwave energy in a direction which is in parallel to the side walls of said columnar film-forming chamber. 
     
     
       9. A method of continuously forming a functional deposited film by a microwave plasma CVD method according to claim 1, wherein said microwave applicator means and said film-forming chamber are hermetically sealed at said microwave introduction opening. 
     
     
       10. A method of continuously forming a functional deposited film by a microwave plasma CVD method according to claim 7, wherein said microwave applicator means are disposed to confront each other at said two end surfaces, such that microwave energy radiated from either of said microwave applicator means is not received by the other microwave applicator means. 
     
     
       11. A method of continuously forming a functional deposited film by a microwave plasma CVD method according to claim 1, wherein leakage of microwave energy radiated into said columnar film-forming chamber to the outside portion of said film-forming chamber is prevented by sealing the end surface of said columnar film-forming chamber. 
     
     
       12. A method of continuously forming a functional deposited film by a microwave plasma CVD method according to claim 1, wherein said raw material gas introduced into said film-forming chamber is exhausted through a spacing between said curving initial end forming means and said curving completion end forming means. 
     
     
       13. A method of continuously forming a functional deposited film by a microwave plasma CVD method according to claim 1, wherein either side of said elongated member is subjected to an electroconductive treatment.