Semiconductor light-emitting element and method for manufacturing therefor

Abstract

A semiconductor light-emitting element has a crystal layer formed from aluminum of a high mol ratio of 60% or greater on the light producing surface. In the semiconductor light-emitting element, a conductive crystal with aluminum of a mol ratio of 50% or less, or a conductive crystal containing no aluminum is formed on the high aluminum crystal layer.

What is claimed is: 
     
       1. A process for manufacturing a semiconductor light-emitting element having a first crystal layer of a high mol ratio of 60% aluminum or greater, and a second, protective layer of a mol ratio of 50% aluminum or less completely covering the first layer, said method comprising: forming a first crystal layer of a high mol ratio of 60% aluminum or greater on a light producing surface;   forming a second, permanent, crystal protective layer of a mol ratio of 50% aluminum or less completely covering the first layer wherein   the first and second layers are formed using a gas phase growth method.   
     
     
       2. The process of claim 1, wherein a metal organic chemical vapor deposition method or a molecular beam epitaxial growth method is used for forming the first and second layers.