Method and apparatus for preparing crystal thin films by using a surface acoustic wave

Abstract

A method and apparatus for preparing thin films, a device, an electronic and magnetic apparatus, an information recording and reproducing apparatus, an information processing apparatus and a crystal preparing method from the molten state. A thin film is prepared as the substrate or the surface of the substrate is being excited and characterized by a device having at least a substrate and a thin film with at least one layer prepared thereon and an electronic and magnetic apparatus having integration of the devices, wherein at least one layer of the thin film is prepared as the surface of the substrate is being excited. The recording and reproducing apparatus for recording and reproducing information is composed of an information memory medium device having a recording layer of the thin film prepared as the surface of the substrate is being excited and a recording head whose core is prepared as the surface of the substrate is being excited. An information processing apparatus for use in input, record, process and output of information is composed of an information memory medium device having a recording layer which is prepared as the surface of the substrate is being excited and a processing part having a semiconductor device with a thin film prepared as the surface of the substrate is being excited.

We claim: 
     
       1. A method for preparing a crystal thin film on a surface of substrate of one of a semiconductor device, magnetic device, and superconductor device, wherein said crystal thin film is prepared by one of sputtering, evaporation, and chemical vapor deposition and is deposited as said substrate or said surface of said substrate is being excited by a surface acoustic wave, wherein the amplitude of the surface acoustic wave excitation is in the range of 1.5 to 3.0 nm. 
     
     
       2. The method according to claim 1, wherein said substrate is piezoelectric. 
     
     
       3. The method according to claim 1, wherein said surface acoustic wave is a stationary wave. 
     
     
       4. An apparatus for preparing a crystal thin film on a surface of a substrate of one of a semiconductor device, magnetic device, and a superconductor device, comprising a means for exciting the surface of the substrate by a surface acoustic wave, said exciting means comprising only one interdigital electrode disposed on a first end of the surface on which said crystal thin film is deposited, and an acoustic absorber for reducing the reflection of the surface acoustic wave, said acoustic absorber disposed on a second end of the surface opposite said exciting means, whereby the crystal thin film is deposited in the area between said exciting means and said acoustic absorber. 
     
     
       5. The apparatus according to claim 4, wherein said exciting means comprises an interdigital electrode and means for applying a voltage to said interdigital electrode. 
     
     
       6. The apparatus according to claim 5, wherein said interdigital electrode is fixed on said substrate. 
     
     
       7. The apparatus according to claim 5, wherein said interdigital electrode is formed on a piezoelectric member and said piezoelectric member is in contact with said substrate. 
     
     
       8. The apparatus according to claim 5, wherein said interdigital electrode is formed in an arc shape. 
     
     
       9. The apparatus according to claim 4, wherein said exciting means is a wedge-shaped oscillator. 
     
     
       10. The apparatus according to claim 9, wherein said substrate is non-piezoelectric. 
     
     
       11. The apparatus according to claim 4, wherein a plurality of said exciting means are provided. 
     
     
       12. The apparatus according to claim 11, wherein a plurality of said exciting means are disposed such that the substrate is excited two-dimensionally.