US5849071AExpiredUtility

Liquid source formation of thin films using hexamethyl-disilazane

70
Assignee: SYMETRIX CORPPriority: Sep 16, 1996Filed: Jun 16, 1997Granted: Dec 15, 1998
Est. expirySep 16, 2016(expired)· nominal 20-yr term from priority
H10P 14/69398H10P 14/6689H10P 14/662H10P 14/6342C23C 18/1225C23C 18/1216
70
PatentIndex Score
27
Cited by
3
References
2
Claims

Abstract

A precursor liquid comprising several metal 2-ethylhexanoates, such as strontium, tantalum and bismuth 2-ethylhexanoates, in a solvent such as xylenes/methyl ethyl ketone and a small amount of hexamethyl-disilazane. The liquid is dried, baked, and annealed to form a thin film of a layered superlattice material, such as strontium bismuth tantalate, on the substrate.

Claims

exact text as granted — not AI-modified
We claim: 
     
       1. A liquid precursor for forming a metal oxide, said precursor comprising: a plurality of metal moieties in effective amounts for forming a layered superlattice material upon application said precursor to a substrate and heating; and a solvent comprising hexamethyl-disilazane. 
     
     
       2. A liquid precursor as in claim 1 wherein said solvent further includes a liquid selected from the group consisting of methyl ethyl ketone, isopropanal, methanol, tetrahydrofuran, xylene, n-butyl acetate, octane and 2-methoxyethanol.

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