Semiconductor structure ladder network configuration

Abstract

A semiconductor structure for creating resistor networks, particularly ladder networks, has resistive sections made of semiconductor material and metal contact areas. A continuous semiconducting resistor strip is provided as a primary arm. Along this continuous primary arm, metal contact areas which contact the resistor strip at the side are provided in accordance with the desired resistor ratio and in order to form corresponding series resistors. In a ladder network, shunt arms have one end connected directly to the long side of the primary arm via the semiconductor material. At the other end of each of the shunt arms, a respective metal contact area is provided.

What is claimed is: 
     
       1. A semiconductor structure for creating a ladder network having resistive sections made of semiconductor material and metal contact areas, said semiconductor structure comprising: a primary arm made of a continuous semiconducting resistor strip,   metal contact areas positioned along a first long side of said primary arm and which contact said primary arm and provide a resistive effect at said contact areas, and   shunt arms made of semiconducting resistor strips, each of said shunt arms having a first end connected directly to a second long side of said primary arm via said semiconducting resistor strips, and a respective second metal contact area provided at a second end of each of said shunt arms, wherein said first and second long sides of said primary arm are oppositely disposed with respect to one another.   
     
     
       2. The semiconductor structure as claimed in claim 1, wherein said shunt arms have a resistance which is a function of the geometry associated with said semiconducting resistor strips. 
     
     
       3. The semiconductor structure as claimed in claim 2, wherein a respective one of said contact areas of said primary arm and a respective one of said connections between said primary arm and a respective one of said shunt arms are located directly opposite to each other. 
     
     
       4. The semiconductor structure as claimed in claim 2, further comprising a metal interconnection where each said second metal contact area connects to said second end of a respective one of said shunt arms, said metal interconnection having a corresponding low resistance in comparison to the resistance associated with each said shunt arm. 
     
     
       5. The semiconductor structure as claimed in claim 4, wherein each one of said metal contact areas in contact with said primary arm operates to segment said primary arm into a plurality of primary arm sections. 
     
     
       6. A resistor ladder network structure comprising: a primary arm made of a continuous resistor strip of semiconducting material; and   a plurality of metal contact areas which contact said primary arm on a first long side thereof, and form said primary arm into a series resistor structure,   a plurality of shunt arms made of semiconducting resistor strips, each of said shunt arms having a first end connected directly to a second long side of said primary arm; and   a second metal contact area disposed at a second end of each of said shunt arms, wherein said first and second long sides of said primary arm are oppositely disposed.   
     
     
       7. The resistor ladder network structure according to claim 6, wherein said contact areas on said first long side of said primary arm and said shunt arms connected on said second long side of said primary arm are located directly opposite to each other. 
     
     
       8. The resistor ladder network structure according to claim 6 further comprising a metal interconnection where said second metal contact areas at said second end of each of said shunt arms is formed. 
     
     
       9. The resistor ladder network structure according to claim 8, wherein each one of said metal contact areas in contact with said primary arm operates to segment said primary arm into a plurality of primary arm sections. 
     
     
       10. A semiconductor resistor ladder-network structure comprising: a primary arm made of a continuous resistor strip of semiconducting material; and   a plurality of metal contact areas connected to a side of said continuous resistor strip and forming a plurality of series coupled resistors out of said continuous resistor strip;   a plurality of shunt arms, each made of a resistor strip of semiconducting material, each of said resistor strips having a first end and a second end, said first end of each of said resistor strips connected directly to a second side of said continuous resistor strip, and said second end of each of said resistor strips terminating at a metal contact area forming a metal interconnection having a first resistance value associated with said interconnection; wherein each said shunt arm has a resistance based on the resistor strip of semiconducting material which is higher than said first resistance of said metal interconnection.   
     
     
       11. The semiconductor resistor ladder-network structure according to claim 10, wherein a respective one of said contact areas disposed on said side of said continuous resistor strip and a respective one of said resistor strips connected on said second side of said continuous resistor strip are located directly opposite to each other. 
     
     
       12. The semiconductor resistor ladder-network structure according to claim 10, wherein each one of said a plurality of metal contact areas connected to said side of said continuous resistor strip, segment said continuous resistor strip into a plurality of primary arm sections.