Method of forming resist pattern utilizing antireflective layer containing rosin or hydrogenated rosin

Abstract

An antireflective layer comprises a binder component in the form of a rosin which is soluble in both a low polar organic solvent and an aqueous alkaline solution, and a light absorbing component which is also soluble in both the low polar organic solvent and the aqueous alkaline solution. In photolithography, the antireflective layer exhibits excellent anti-reflective properties in a predetermine UV wavelength region, and, when used for forming resist patterns, the antireflective layer can be applied dissolved in the low polar organic solvent in a manner which has no detrimental effect on the resist, and can be removed along with the resist during the development process using the aqueous alkaline solution.

What is claimed is: 
     
       1. A method for forming a resist pattern on a surface, comprising the steps of: processing a photoresist material to deposit a photoresist film on the surface;   coating the surface with an antireflective layer depositing material containing a light absorption component and a binder component comprising rosin or hydrogenated rosin as a main component in the binder component directly on said photoresist film to deposit an antireflective layer; and   after selective exposure, simultaneously developing said photoresist film and removing said antireflective layer using an alkaline aqueous developing solution.   
     
     
       2. A method for forming a resist pattern according to claim 1, wherein said antireflective layer is soluble in a low polar organic solvent. 
     
     
       3. A method for forming a resist pattern according to claim 1, wherein the rosin or hydrogenated rosin in the binder component comprises a film-depositable material containing at least abietic acid or hydrogenated abietic acid. 
     
     
       4. A method for forming a resist pattern according to claim 3, wherein said rosin or hydrogenated rosin is respectively Chinese rosin or hydrogenated Chinese rosin. 
     
     
       5. A method for forming a resist pattern according to claim 1, wherein said light absorbing component is a phenol derivative. 
     
     
       6. A method for forming a resist pattern according to claim 5, wherein said phenol derivative is selected from the group consisting of pyrogallol, bis-phenol A, and bis-phenol-H. 
     
     
       7. A method for forming a resist pattern according to claim 2, wherein said low polar organic solvent is selected from the group consisting of xylene, decalin, ethylbenzene, and chlorobenzene. 
     
     
       8. A method for forming a resist pattern according to claim 1 wherein said exposure step is performed by using a deep ultraviolet light. 
     
     
       9. A method for making a semiconductor device comprising the steps of: processing photoresist material to deposit a photoresist film on a substrate;   coating the substrate with an antireflective layer depositing material containing a light absorption component and a binder comprising rosin or hydrogenated rosin as a main component of the binder directly on said photoresist film to deposit an antireflective layer;   after exposure, simultaneously developing the photoresist film and removing said antireflective layer to form a resist pattern using an alkaline aqueous developing solution; and   using said resist pattern for making said semiconductor device.