Method for forming interlayer insulating film of semiconductor devices

Abstract

A method for forming an interlayer insulating film, which involves a first oxide film deposition, a GeBPSG film deposition, a thermal treatment and a second oxide film deposition all being carried out in a continuous manner in an LPCVD device. In accordance with this method, it is possible to form an interlayer insulating film having a superior planarization characteristic in a single pass. The deposition and thermal treatment of the interlayer insulating film are carried out in a continuous manner in a single processing device. Accordingly, it is possible to effectively suppress the degradation of the GeBPSG film caused by a moisture absorption. Since a protective oxide film is deposited over the GeBPSG film in a continuous manner after the thermal treatment of the GeBPSG film, the degradation of the GeBPSG film caused by the moisture absorption can be affectively suppressed.

What is claimed is: 
     
       1. A method for forming an interlayer insulating film of a semiconductor device, comprising the steps of: forming a first oxide film over a substrate having a topology;   forming a Ge boro phospho silicate glass film over the first oxide film, wherein the Ge boro phospho silicate glass film is deposited to a thickness of 1,000 to 10,000 Å under the condition that the content of Ge is 30 wt % or less, the content of B ranges from 1 wt % to 10 wt %, and the content of P ranges from 1 wt % to 10 wt %;   planarizing the Ge boro phospho silicate glass film using a thermal treatment process without losing a vacuum;   forming a second oxide film over the Ge boro phospho silicate glass film, wherein the steps from the step of depositing the first oxide film to the step of depositing the second oxide film are carried out at a temperature of 600° to 850° C. and a pressure of 1 mTorr to 100 Torr in a continuous manner in a single processing device without losing the vacuum.   
     
     
       2. The method in accordance with claim 1, wherein the first and second oxide films are deposited to a thickness of 100 to 2,000 Å using a reacting gas containing tetra ethyl ortho silicate and O 2 .