Method of polishing a semiconductor wafer

Abstract

A method of polishing semiconductor wafers is provided. The method will not impair the original (pre-polishing) contour of semiconductor wafers, and semiconductor wafers can be polished so as to have high flatness. In the method according to this invention, a silicon rubber sheet 2 is fixed on a base 4, and an abrasive cloth 5 is secured on the silicon rubber sheet 2. A template 1 of thickness close to that of a semiconductor wafer 10 is secured on a backing pad 32. The semiconductor wafer 10 is restrained by the template 1 and is impelled in to contact with the abrasive cloth 5 to polish effectively.

What is claimed is: 
     
       1. A method of polishing a semiconductor wafer, in which an abrasive cloth secured on a base is impelled in to contact with a semiconductor wafer restrained by a template to facilitate polishing, wherein a resilient sheet is inserted between the base and the abrasive cloth. 
     
     
       2. The method of polishing a semiconductor wafer, as claimed in claim 1, wherein the semiconductor wafer is restrained by the template having a thickness substantially equal to that of the semiconductor wafer. 
     
     
       3. The method of polishing a semiconductor wafer, as claimed in claim 1, wherein the resilient sheet is a silicone rubber sheet. 
     
     
       4. The method of polishing a semiconductor wafer, as claimed in claim 2, wherein the difference between thickness of the semiconductor wafer and that of the template is less than 100 μm. 
     
     
       5. The method of polishing a semiconductor wafer, as claimed in claim 1, wherein the hardness value of the resilient sheet ranges from 20 to 90° measured according to the specification K6301 (A type) of JIS. 
     
     
       6. The method of polishing a semiconductor wafer, as claimed in claim 3, wherein the thickness of the silicone rubber sheet is between 0.5 mm and 3.0 mm.