Method of profiling the termination paste for chip capacitor electrodes

Abstract

A method of profiling the border of termination paste applied to a chip capacitor electrode comprising the steps of casting a layer of termination paste of finite thickness; passing a profiling element through the upper part of the layer of paste, the element having an exterior profile that is arranged to dip into the paste and scrape some of the paste from the upper part of the paste layer to form a reverse profile in the layer of the paste; and, dipping a chip capacitor electrode into the paste layer at the reverse profile formed therein, to terminate the capacitor with the profile formed in the paste.

What is claimed is: 
     
       1. A method of profiling the border of termination paste applied to a chip capacitor electrode comprising the steps of: a) casting a layer of termination paste of finite thickness;   b) passing a profiling element through the upper part of the layer of paste, said element having an exterior reverse profile that is arranged to dip into said paste and scrape some of the paste from the upper part of the paste layer to form a reverse profile in said layer of said paste; and,   c) dipping a chip capacitor electrode into the paste layer at said reverse profile formed therein, to terminate said capacitor with the profile formed in the paste.   
     
     
       2. The method of profiling the border of termination paste of claim 1 where the step of casting a layer of termination paste of finite thickness is made on top of a planar surface. 
     
     
       3. The method of profiling the border of termination paste of claim 1 where the step of casting a layer of termination paste is followed by the step of scraping the top of the layer of paste to form a flat top surface on the layer. 
     
     
       4. The method of profiling the border of termination paste of claim 3 where the step of passing a profiling element through the upper part of the layer of paste, below said flat top surface of said layer, said element having an exterior profile that is arranged to dip into said paste and scrape some of the paste from the upper part of the paste layer to form a reverse profile in said paste is followed by the step of terminating said capacitor with paste where the upper surface of the paste applied to the electrode forms a border that is straight and parallel to the bottom edge of the chip. 
     
     
       5. The method of profiling the border of termination paste of claim 3 where the step of passing a profiling element through the upper part of the layer of paste, below said flat top surface of said layer, said profiling element having an exterior profile that is arranged to dip into said paste and scrape some of the paste from the upper part of the paste layer to form a reverse profile in said paste includes using a pair of wings extending from each side of the element to aid in scraping the paste from about the profile and is followed by the step of terminating said capacitor with paste where the upper surface of the paste applied to the electrode forms a border that is straight and parallel to the bottom edge of the chip. 
     
     
       6. The method of profiling the border of termination paste of claim 1 where the profile formed in the top of the layer of paste is curved. 
     
     
       7. The method of profiling the border of termination paste of claim 1 wherein the profile formed in the top of the layer of paste is a smooth curve that is deep in the center and shallow at the edges. 
     
     
       8. The method of profiling the border of termination paste of claim 3 wherein the step, of passing a profiling element through the upper part of the layer of paste, below said flat top surface of said layer, said element having an exterior profile that is arranged to dip into said paste and scrape some of the paste from the upper part of the paste layer to form a reverse profile in said of said paste, is repeated across the width of the layer of paste to allow a plurality of chip capacitors to be terminated in one operation. 
     
     
       9. A method of profiling the border of termination paste applied to a chip capacitor electrode comprising the steps of: a) casting a layer of termination paste of finite thickness on top of a planar surface;   b) scraping the top of the layer of paste to form a flat top surface on the layer;   c) passing a profiling element through the upper part of the layer of paste, below said flat top surface of said layer and spaced-above said planar surface, said element having an exterior profile that is arranged to dip into said paste and scrape some of the paste from the upper part of the paste layer for terminating said capacitor with paste where, after interplay of paste wetting and surface tension phenomena, the upper surface of the paste applied to the electrode forms a border that is straight and parallel to the bottom edge of the chip; and,   d) dipping the chip capacitor electrode into the paste layer, at said profile formed therein, to terminate said capacitor with paste having the profile formed therein.   
     
     
       10. The method of profiling the border of termination paste applied to a chip capacitor electrode of claim 9 wherein the border of the profile formed on the electrode is parallel to the lower edge of the electrode. 
     
     
       11. The method of profiling the border of termination paste of claim 9 where the profile formed in the top of the layer of paste is curved. 
     
     
       12. The method of profiling the border of termination paste of claim 9 wherein the profile formed in the top of the layer of paste is a smooth curve that is deep in the center and shallow at the edges. 
     
     
       13. The method of profiling the border of termination paste of claim 9 wherein the step, of passing a profiling element through the upper part of the layer of paste, below said flat top surface of said layer, said element having an exterior profile that is arranged to dip into said paste and scrape some of the paste from the upper part of the paste layer to form a reverse profile in said of said paste, is repeated across the width of the layer of paste to allow a plurality of chip capacitors to be terminated in one operation. 
     
     
       14. The method of profiling the border of termination paste of claim 9 wherein said profiling element is monolithic is design and comprises a profiling blade, having formed thereon the reverse profile that is to be imparted on said top surface of said layer of paste, and mounting plate on which said profiling blade is mounted. 
     
     
       15. The terminated chip produced by the process of claim 1. 
     
     
       16. The terminated chip produced by the process of claim 9.