Method for etching damaged zones on an edge of a semiconductor substrate, and etching system

Abstract

The apparatus and method of the invention allow etching of the edge of a semiconductor substrate even where no resist is applied to the front side and back side of the semiconductor substrate. The semiconductor substrate is introduced into a protective chamber within an evacuatable process chamber. The front side and the back side of the semiconductor substrate are covered by the protective chamber except for the edge of the semiconductor substrate to be etched. The edge of the semiconductor substrate is then exposed to an etching agent. Etching products and excess etching agent are removed.

I claim: 
     
       1. A method of etching damaged zones on an edge of a semiconductor substrate having a resist-free front side and a resist-free back side, the method which comprises: providing a process chamber and a protective chamber within the process chamber;   placing a semiconductor substrate with a substrate edge to be etched, with a resist-free front side, and with a resist-free back side into the protective chamber such that a gap exists between the resist-free back side and the protective chamber, covering the front side and the back side with the protective chamber, while leaving the substrate edge exposed in the process chamber; and   etching the substrate edge with an etching agent, and removing etching products and excess etching agent.   
     
     
       2. A method of etching damaged zones on an edge of a semiconductor substrate having a resist-free front side and a resist-free back side, the method which comprises: providing a process chamber and a protective chamber within the process chamber;   placing a semiconductor substrate with a substrate edge to be etched, with a resist-free front side, and with a resist-free back side into the protective chamber, covering the front side and the back side with the protective chamber, while leaving the substrate edge exposed in the process chamber;   passing a protective gas over the front side and over the back side of the semiconductor substrate; and   etching the substrate edge with an etching agent, and removing etching products and excess etching agent.   
     
     
       3. The method according to claim 1, wherein the etching step comprises etching with an etchant gas. 
     
     
       4. The method according to claim 3, wherein the etchant gas is a gas mixture. 
     
     
       5. The method according to claim 3, which further comprises exciting the etchant gas to form a plasma, and evacuating the process chamber. 
     
     
       6. The method according to claim 5, wherein the exciting step comprises exciting the etchant gas with one of microwaves and high frequency electromagnetic waves. 
     
     
       7. The method according to claim 5, wherein the exciting step comprises generating the plasma in a plasma generating chamber separate from the process chamber. 
     
     
       8. The method according to claim 1, wherein the etching step comprises spraying etching solution onto the substrate edge. 
     
     
       9. The method according to claim 8, which further comprises heating at least one of the semiconductor substrate and the process chamber to a temperature of ≦100° C.