Electrostatic chucking mechanism

Abstract

An electrostatic chucking mechanism including an electrode body, a dielectric block placed on the front of the electrode body and having a dielectric portion to be dielectrically polarized for electrostatically chucking an object to be chucked, and an intermediate layer placed between the electrode body and the dielectric block. The intermediate layer is formed of a metal such as indium having extendibility for absorbing thermal deformation of the electrode body or the dielectric block and is heated and pressurized, thereby joining the electrode body and the dielectric block. A thin film of indium, chrome, or the like, is prepared on the junction face of the dielectric block, enhancing a junction force and adhesion by the intermediate layer.

What is claimed is: 
     
       1. An electrostatic chucking mechanism comprising: an electrode body;   a dielectric block being placed on a front of said electrode body and containing a dielectric portion to be dialectrically polarized by a DC voltage applied via said electrode body for electrostatically chucking an object to be chucked;   an intermediate layer placed between said electrode body and said dielectric block, said intermediate layer being formed of a metal having extendibility for absorbing thermal deformation of said electrode body or said dielectric block, and being heated and pressurized, thereby joining said electrode body and said dielectric block; and   a thin film prepared on a surface of said dielectric block, said thin film being placed between said intermediate layer and said dielectric block and being in contact with said intermediate layer.   
     
     
       2. The electrostatic chucking mechanism as claimed in claim 1, wherein said intermediate layer is formed of indium. 
     
     
       3. The electrostatic chucking mechanism as claimed in claim 1, wherein said intermediate layer is formed of tin. 
     
     
       4. The electrostatic chucking mechanism as claimed in claim 1, wherein said intermediate layer is formed of an alloy consisting essentially of indium. 
     
     
       5. The electrostatic chucking mechanism as claimed in claim 1, wherein said intermediate layer is formed of an alloy consisting essentially of tin. 
     
     
       6. The electrostatic chucking mechanism as claimed in claim 1, wherein said thin film is formed of indium. 
     
     
       7. The electrostatic chucking mechanism as claimed in claim 1, wherein said thin film is formed of chrome. 
     
     
       8. The electrostatic chucking mechanism as claimed in claim 1, wherein an auxiliary electrode plate to which the DC voltage is applied is disposed below the dielectric portion of said dielectric block. 
     
     
       9. The electrostatic chucking mechanism as claimed in claim 8, wherein said auxiliary electrode plate is divided into two parts. 
     
     
       10. An electrostatic chucking mechanism as claimed in claim 1, wherein said thin film is purified.