US5956143AExpiredUtility

Laser ultrasonics-based material analysis system and method utilizing lamb modes

73
Assignee: TEXTRON SYSTEMS CORPPriority: Sep 19, 1994Filed: Feb 14, 1997Granted: Sep 21, 1999
Est. expirySep 19, 2014(expired)· nominal 20-yr term from priority
Inventors:Petros Kotidis
G01N 2291/011H01S 5/141G01N 2291/045G01N 2291/102H01S 5/02255H01S 5/02208G01N 2291/0427G01N 21/1717G01N 2291/0421G01N 2291/0251H01S 3/08004G01N 29/228G01N 29/348G01N 2291/0237G01N 29/2418G01N 2291/044G01N 2291/2697G01N 29/07G01N 2291/02827G01N 2291/0422G01N 2291/015G01N 29/4427G01N 29/041H01S 3/106G01N 2291/0423G01N 29/326G01N 29/2456G01N 2291/02854
73
PatentIndex Score
24
Cited by
1
References
4
Claims

Abstract

An interferometric system for measuring a property of interest of a target, such as temperature, by detecting the velocities of the symmetric S o ) lamb modes and anti-symmetric (A o ) lamb modes.

Claims

exact text as granted — not AI-modified
What is claimed is: 
     
       1. A system for determining a characteristic of a target having a thickness suitable for supporting Lamb modes, comprising: means for launching an elastic wave within the target;   an interferometer for detecting a displacement of a surface of the target in response to said launched elastic wave;   means, responsive to said detected displacement, for determining a velocity of an elastic wave corresponding to a symmetric (S o ) Lamb mode and a velocity of an elastic wave corresponding to an anti-symmetric (A o ) Lamb mode within the target; and   means for correlating said determined S o  Lamb mode and said A o  Lamb mode velocities with a property of interest of the target.   
     
     
       2. A system as set forth in claim 1 wherein a frequency of the elastic wave is made a function of the thickness of the target so as to substantially eliminate a dispersive characteristic of the elastic wave. 
     
     
       3. A system as set forth in claim 1 wherein said property of interest is temperature. 
     
     
       4. A system as set forth in claim 3 wherein the target is comprised of a silicon wafer.

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